Paper 13115-1
Paper 13115-1
Probing deep-ultraviolet optoelectronic processes in hexagonal boron nitride (Invited Paper)
18 August 2024 • 9:00 AM - 9:30 AM PDT
Abstract
In this work, we probe optoelectronic processes at a band edge in hBN by means of optical imaging and spectroscopy at deep ultraviolet frequencies. Our laser excitation spectroscopy shows that strong radiative recombination and carrier excitation processes originate from the pristine structure and the stacking faults in hBN. We further demonstrate prominent electroluminescence and photocurrent generation from hBN by fabricating vdW heterostructures with graphene electrodes.
Presenter
Pohang Univ. of Science and Technology (Korea, Republic of)
Jonghwan Kim, Ph. D., is interested in novel quantum phenomena emerging in low-dimension nanomaterials for fascinating optical science and optoelectronics. He has obtained Ph.D. in Physics at UC Berkeley in 2015 with the focus on ultrafast optical spectroscopy/microscopy, high quality 2D material preparation and nano-device fabrication. In POSTECH, as an assistant professor started from 2017, he has been constructing an interdisciplinary research team at the department of materials science and engineering to connect the bridge between fundamental physics and advanced material engineering.