Optoelectronic properties of ultrawide-band-gap semiconductors probed by deep-ultraviolet spectroscopy (Invited Paper)

Ultrawide-band-gap (UWBG) semiconductors have attracted much attention for deep-ultraviolet (DUV) photonics and high-power electronics. However, the physical understanding is in infancy, preventing the potential capacities of UWBG semiconductors to be drawn out. Therefore, the electronic and optical properties should be fully elucidated using such as DUV spectroscopy. Whereupon, another obstacle stands that DUV spectroscopy itself is immature. In the presentation, we therefore talk about the development of DUV scanning near-field optical microscope and the optoelectronic properties of AlN studied by DUV luminescence spectroscopy.