Paper 13115-4
Paper 13115-4
Achieving UV to Infrared AC electroluminescence in MOS capacitors (Invited Paper)
18 August 2024 • 10:50 AM - 11:20 AM PDT
Abstract
In this talk, I will introduce an electroluminescent (EL) device that overcomes the Schottky barrier for efficient UV to IR emission based on a metal-oxide-semiconductor (MOS) capacitor structure. It combines a MOS capacitor with a carbon nanotube network and transition-metal dichalcogenide monolayers. By applying AC voltage, it emits across a wide range of bandgaps, bypassing the need for energy level alignment. This device shows minimal dependence on Schottky barrier height, achieving bright EL in materials with varied thicknesses or mobilities. This AC EL via MOS capacitor device offers a new avenue for UV light sources and optoelectronic applications.
Presenter
Der-Hsien Lien
National Yang Ming Chiao Tung Univ. (Taiwan)
Der-Hsien Lien completed his PhD in Electronics Engineering at National Taiwan University in 2015, followed by a postdoctoral fellowship in the EECS department at the University of California, Berkeley, until 2020. He currently holds the position of Junior Chair Professor in the Electrical Engineering Department at National Yang Ming Chiao Tung University. His research focuses on advanced semiconductor technologies, electronic materials, and the development of smart electronics, with his findings published in prestigious journals such as Science, Nature, Nature Electronics, Nature Communications, Nano Letters, Advanced Materials, and presented at the Symposia on VLSI Technology. Dr. Lien has over 90 SCI-indexed papers, accumulating more than 13,000 citations and an H-index of 46.
https://scholar.google.com/citations?user=qkCyoPgAAAAJ&hl=en