High peak power GaSb-based VECSELs

Jacob Hoehler; Ricky Gibson Jr.; Bradley J. Thompson; Robert Bedford

doi:10.1117/12.2603501

4 March 2022 High peak power GaSb-based VECSELs

Jacob Hoehler, Ricky Gibson Jr., Bradley J. Thompson, Robert Bedford

Proceedings Volume 11984, Vertical External Cavity Surface Emitting Lasers (VECSELs) XI; 1198406 (2022) https://doi.org/10.1117/12.2603501
Event: SPIE LASE, 2022, San Francisco, California, United States

Abstract

A single transverse mode high pulse-energy GaSb VECSEL emitting at 2030 nm was studied. The peak power exceeds 500 W while maintaining good beam quality throughout the operation range. The cavity employs a Pockels cell combined with a low-loss thin film polarizer to selectively dump the intracavity energy in a 10 ns pulse. Thermal mitigation of the gain chip is achieved by both gain-switching and utilizing a long wavelength pump laser at 1470 nm compared to the traditional 980 nm pump for GaSb VECSELs. The laser has promise for incoherent LIDAR, materials processing, gas sensing, and nonlinear optics.

Conference Presentation

Citation Download Citation

Jacob Hoehler, Ricky Gibson Jr., Bradley J. Thompson, and Robert Bedford "High peak power GaSb-based VECSELs", Proc. SPIE 11984, Vertical External Cavity Surface Emitting Lasers (VECSELs) XI, 1198406 (4 March 2022); https://doi.org/10.1117/12.2603501

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