
Proceedings Paper
Activation experiments and quantum efficiency theory on gradient-doping NEA GaAs photocathodesFormat | Member Price | Non-Member Price |
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Paper Abstract
Two gradient-doping GaAs photocathodes were designed and activated, the achieved highest integral sensitivity for the
gradient-doping cathode is 2178μA/lm, which is much higher than that of uniform-doping cathode. The increase in the
integral sensitivity is attributed to the electric field induced in the active layer of gradient-doping cathode. We analyze
the transported mechanism of gradient-doping cathodes and solve the quantum efficiency equations of exponential-doping
cathode, which is a special gradient-doping cathode with a constant induced electric field, from the one-dimensional
continuity equations. According to these equations, we calculate the theoretical quantum yield of the
exponential-doping cathodes, and compare the performance of exponential-doping cathodes with that of uniform-doping
cathodes. The theoretical results show that the exponential-doping structure can increase the quantum yield of
photocathodes evidently, for the transmission-mode cathodes the increase is even more pronounced.
Paper Details
Date Published: 19 November 2007
PDF: 8 pages
Proc. SPIE 6782, Optoelectronic Materials and Devices II, 67822R (19 November 2007); doi: 10.1117/12.745944
Published in SPIE Proceedings Vol. 6782:
Optoelectronic Materials and Devices II
Yoshiaki Nakano, Editor(s)
PDF: 8 pages
Proc. SPIE 6782, Optoelectronic Materials and Devices II, 67822R (19 November 2007); doi: 10.1117/12.745944
Show Author Affiliations
Jijun Zou, Nanjing Univ. of Science and Technology (China)
East China Institute of Technology (China)
Zhi Yang, Nanjing Univ. of Science and Technology (China)
Jianliang Qiao, Nanjing Univ. of Science and Technology (China)
East China Institute of Technology (China)
Zhi Yang, Nanjing Univ. of Science and Technology (China)
Jianliang Qiao, Nanjing Univ. of Science and Technology (China)
Pin Gao, Nanjing Univ. of Science and Technology (China)
Benkang Chang, Nanjing Univ. of Science and Technology (China)
Benkang Chang, Nanjing Univ. of Science and Technology (China)
Published in SPIE Proceedings Vol. 6782:
Optoelectronic Materials and Devices II
Yoshiaki Nakano, Editor(s)
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