This PDF file contains the front matter associated with SPIE Proceedings Volume 9113 including the Title Page, Copyright information, Table of Contents, Introduction (if any), and Conference Committee listing.

Micro-hotplates are MEMS structures of interest for low-power gas sensing, lab-on-chips and space applications, such as micro-thrusters. Micro-hotplates usually consist in a Joule heater suspended on a thin-film membrane while thermopiles or thermodiodes are added as temperature sensors and for feedback control. The implementation of micro-hotplates using a Silicon-On-Insulator technology makes them suited for co-integration with analog integrated circuits and operation at elevated environmental temperatures in a range from 200 to 300 °C, while the heater allows thermal cycling in the kHz regime up to 700 °C, e.g. necessary for the activation of gas sensitive metal-oxide on top of the membrane, with mWrange electrical power. The demonstrated resistance of micro-hotplates to gamma radiations can extend their use in nuclear plants, biomedical sterilization and space applications. In this work, we present results from electrical tests on micro-hotplates during their irradiation by Cobalt-60 gamma rays with total doses up to 18.90 kGy. The micro-hotplates are fabricated using a commercial 1.0 μm Silicon-On-Insulator technology with a tungsten Joule heater, which allows power-controlled operation above 600 °C with less than 60 mW, and temperature sensing silicon diodes located on the membrane and on the bulk. We show the immunity of the sensing platform to the harsh radiation environment. Beside the good tolerance of the thermodiodes and the membrane materials to the total radiation dose, the thermodiode located on the heating membrane is constantly annealed during irradiation and keeps a constant sensitivity while post-irradiation annealing can restore the thermodiode.

The development of radiation-hardened, temperature-tolerant materials, sensors and electronics will enable lightweight space sub-systems (reduced packaging requirements) with increased operation lifetimes in extreme harsh environments such as those encountered during space exploration. Gallium nitride (GaN) is a ceramic, semiconductor material stable within high-radiation, high-temperature and chemically corrosive environments due to its wide bandgap (3.4 eV). These material properties can be leveraged for ultraviolet (UV) wavelength photodetection. In this paper, current results of GaN metal-semiconductor-metal (MSM) UV photodetectors behavior after irradiation up to 50 krad and temperatures of 15°C to 150°C is presented. These initial results indicate that GaN-based sensors can provide robust operation within extreme harsh environments. Future directions for GaN-based photodetector technology for down-hole, automotive and space exploration applications are also discussed.

A Silicon Carbide Solid-State Photomultiplier (SiC-PM) was designed, fabricated and characterized for the first time. A die size of 3x3 mm² has a 2x2 mm² pixelated photosensitive area on it. The pixelated area consists of 16 sub-arrays of 0.5x0.5 mm² with 64 pixels (60 μm pitch) in each sub-array. Each individual pixel has an integrated quenching resistor made of poly-silicon. Optical measurements of the SiC-PM were performed using fast UV LED with a wavelength of 300 nm demonstrating Geiger mode operation. Output signal waveforms measured at temperatures from 20°C to 200°C indicated temperature dependent time constants. The discrete nature of output signals indicated the capability of the SiC-PM to detect single photons from a faint UV light flux.

Temperature sensing under harsh environments is important to various industrial applications. Among different types of temperature sensors, semiconductor diode sensor has the advantages of high sensitivity and compatibility with integrated circuits. In this work, a temperature sensor based on 4H-SiC pn diode has been designed, fabricated and characterized. The device is capable of stable operation in a temperature range from 20 °C up to 600 °C. In forward biased region, the forward voltage of the 4H-SiC pn diode shows linear dependence on temperature at a constant current. This dependence is utilized to sense temperature variations and the proposed device achieves a sensitivity of 3.5 mV/°C. These results indicate that an integrated circuit compatible temperature sensor based on 4H-SiC pn diode is a promising technology for harsh environment sensing applications.

Very low (~0.125 mV) shifts in offset voltage were achieved in silicon carbide (SiC) piezoresistive pressure sensors during thermal cycling between 25 and 500 °C for 500 hours. It resulted in reduced measurement error to ~ 0.36 % and ~ 0.9 % of the full-scale output at 25 and 500 °C, respectively. The reduction in the offset shift was the result of the advancement made in controlling the intermetallic diffusion and microstructural phase changes within the contact metallization. The low offset voltage results provide critical figures of merit needed for quantifying the measurement error and correction when the SiC pressure sensors are used. The results demonstrate more robust and reliable SiC pressure sensors operating with significantly reduced FSO errors at 500 °C.

The performance and aging of MEMS often rely on the stability of the mechanical properties over time and under harsh conditions. An overview is given on methods to investigate small variations of the mechanical properties of structural MEMS materials by functional characterization, high-resolution x-ray diffraction methods (HR-XRD) and environmental testing. The measurement of the dynamical properties of micro-resonators is a powerful method for the investigation of elasticity variations in structures relevant to microtechnology. X-ray diffraction techniques are used to analyze residual strains and deformations with high accuracy and in a non-destructive manner at surfaces and in buried micro-structures. The influence of elevated temperatures and radiation damage on the performance of resonant microstructures with a focus on quartz and single crystal silicon is discussed and illustrated with examples including work done in our laboratories at CSEM and EPFL.

A number of important energy and defense-related applications would benefit from sensors capable of withstanding extreme temperatures (>300°C). Examples include sensors for automobile engines, gas turbines, nuclear and coal power plants, and petroleum and geothermal well drilling. Military applications, such as hypersonic flight research, would also benefit from sensors capable of 1000°C. Silicon carbide (SiC) has long been recognized as a promising material for harsh environment sensors and electronics because it has the highest mechanical strength of semiconductors with the exception of diamond and its upper temperature limit exceeds 2500°C, where it sublimates rather than melts. Yet today, many advanced SiC MEMS are limited to lower temperatures because they are made from SiC films deposited on silicon wafers. Other limitations arise from sensor transduction by measuring changes in capacitance or resistance, which require biasing or modulation schemes that can with- stand elevated temperatures. We are circumventing these issues by developing sensing structures directly on SiC wafers using SiC and piezoelectric aluminum nitride (AlN) thin films. SiC and AlN are a promising material combination due to their high thermal, electrical, and mechanical strength and closely matched coefficients of thermal expansion. AlN is also a non-ferroelectric piezoelectric material, enabling piezoelectric transduction at temperatures exceeding 1000°C. In this paper, the challenges of incorporating these two materials into a compatible MEMS fabrication process are presented. The current progress and initial measurements of the fabrication process are shown. The future direction and the need for further investigation of the material set are addressed.

Conventional electronic components are prone to failure and drift when exposed to space environments, which contain harsh conditions, such as extreme variation in temperature and radiation exposure. As a result, electronic components are often shielded with heavy and complex packaging. New material platforms that leverage the radiation and temperature tolerance of wide bandgap materials can be used to develop robust electronic components without complex packaging. One such component that is vital for communication, navigation and signal processing on space exploration systems is the on-board timing reference, which is conventionally provided by a quartz crystal resonator and is prone to damage from radiation and temperature fluctuations. As a possible alternative, this paper presents the characterization of microfabricated and wide bandgap gallium nitride (GaN) surface acoustic wave (SAW) resonators in radiation environments. Ultimately, in combination with the two-dimensional gas (2DEG) layer at the AlGaN/GaN interface, high electron mobility transistor (HEMT) structures can provide a monolithic solution for timing electronics on board space systems. One-port SAW resonators are microfabricated on a GaN-on-sapphire substrate are used to explore the impact of irradiation on the device performance. The GaN-based SAW resonator was subjected to extreme temperature conditions to study the change in resonance frequency. Thermal characterization of the resonator has revealed a self-compensating property at cryogenic temperatures. In addition, GaN-on-sapphire samples were irradiated using a Cs-137 source up to 55 krads of total ionizing dose (TID). The measured frequency response and Raman spectroscopy of the GaN/sapphire SAW resonators microfabricated from the irradiated samples are presented.

Microelectromechanical systems (MEMS) energy harvesting devices aiming at powering wireless sensor systems for structural health monitoring in harsh environments are presented. For harsh environment wireless sensor systems, sensor modules are required to operate at elevated temperatures (> 250°C) with capabilities to resist harsh chemical conditions, thereby the use of battery-based power sources becomes challenging and not economically efficient if considering the required maintenance efforts. To address this issue, energy harvesting technology is proposed to replace batteries and provide a sustainable power source for the sensor systems towards autonomous harsh environment wireless sensor networks. In particular, this work demonstrates a micromachined aluminum nitride/cubic silicon carbide (AlN/3C–SiC) composite diaphragm energy harvester, which enables high temperature energy harvesting from ambient pulsed pressure sources. The fabricated device yields an output power density of 87 μW/cm² under 1.48-psi pressure pulses at 1 kHz while connected to a 14.6-kΩ load resistor. The effects of pulse profile on output voltage have been studied, showing that the output voltage can be maximized by optimizing the diaphragm resonance frequency based on specific pulse characteristics. In addition, temperature dependence of the diaphragm resonance frequency over the range of 20°C to 600°C has been investigated and the device operation at temperatures as high as 600°C has been verified.

Gallium nitride based high-electron-mobility transistors (HEMTs) have been investigated extensively as an alternative to Si-based power transistors by academia and industry over the last decade. It is well known that GaN-based HEMTs outperform Si-based technologies in terms of power density, area specific on-state resistance and switching speed. Recently, wide band-gap material systems have stirred interest regarding their use in various sensing fields ranging from chemical, mechanical, biological to optical applications due to their superior material properties. For harsh environments, wide bandgap sensor systems are deemed to be superior when compared to conventional Si-based systems. A new monolithic sensor platform based on the GaN HEMT electronic structure will enable engineers to design highly efficient propulsion systems widely applicable to the automotive, aeronautics and astronautics industrial sectors. In this paper, the advancements of GaN-based HEMTs for mechanical sensing applications are discussed. Of particular interest are multilayered heterogeneous structures where spontaneous and piezoelectric polarization between the interface results in the formation of a 2-dimensional electron gas (2DEG). Experimental results presented focus on the signal transduction under strained operating conditions in harsh environments. It is shown that a conventional AlGaN/GaN HEMT has a strong dependence of drain current under strained conditions, thus representing a promising future sensor platform. Ultimately, this work explores the sensor performance of conventional GaN HEMTs and leverages existing technological advances available in power electronics device research. The results presented have the potential to boost GaN-based sensor development through the integration of HEMT device and sensor design research.

Many defects can cause deterioration and cracks in concrete; these are results of poor concrete mix, poor workmanship, inadequate design, shrinkage, chemical and environmental attack, physical or mechanical damage, and corrosion of reinforcing steel (RS). We want to develop a suite of sensors and systems that can detect that corrosion is taking place in RS and inform owners how serious the problem is. By understanding the stages of the corrosion process, we can develop special a sensor that detects each transition. First, moisture ingress can be monitored by a fiber optics humidity sensor, then ingress of Chloride, which acts as a catalyst and accelerates the corrosion process by converting iron into ferrous compounds. We need a fiber optics sensor which can quantify Chloride ingress over time. Converting ferric to ferrous causes large volume expansion and cracks. Such pressure build-up can be detected by a fiber optic pressure sensor. Finally, cracks emit acoustic waves, which can be detected by a high frequency sensor made with phase-shifted gratings. This paper will discuss the progress in our development of these special sensors and also our plan for a field test by the end of 2014. We recommend that we deploy these sensors by visually inspecting the affected area and by identifying locations of corrosion; then, work with the designers to identify spots that would compromise the integrity of the structure; finally, drill a small hole in the concrete and insert these sensors. Interrogation can be done at fixed intervals with a portable unit.

In this paper, the compensating scheme for the large noise induced by rainfall in the distributed optical-fiber vibration sensor engineering system (DFVSES) is proposed and demonstrated. DFVSES with rainfall compensation is made up of two subsystems using a common optical source and same optical circuit. Analyzing spectrum of the output signals under rainfall condition, and comparing the amplitude of the output signal for the sensing subsystem and the amplitude calculated from the amplitude of the output signal for the reference subsystem, the vibration can be got in the harsh climatic environments. We set up the experimental system, and the results show DFVSES with the scheme can effectively work under rainfall condition.

We report the development of a time-resolved direct wall shear stress senor using an optical moiré transduction technique for harsh environments. The floating-element sensor is a lateral-position sensor that is micromachined to enable sufficient bandwidth and to minimize spatial aliasing. The optical transduction approach offers several advantages over electrical-based floating element techniques including immunity from electromagnetic interference and the ability to operate in a conductive fluid medium. Packaging for optical sensors presents significant challenges. The bulky nature and size of conventional free-space optics often limit their use to an optical test bench, making them unsuitable for harsh environments. The optical package developed in this research utilizes an array of optical fibers mapped over the moiré fringe. The fiber bundle approach results in a robust package that reduces the overall size of the optics, mitigates vibration between the sensor and optoelectronics and enables in situ measurement. The optical package for sampling the amplified moiré fringe is evaluated using bench top test setups. An optical test bench is constructed to simulate the movement of the moiré fringe on the floating element. High-resolution images of the optical fringe and optical fibers are combined in simulation to model the lateral displacement of the fringe. The performance of several fringe estimation algorithms are studied and evaluated. Based on the optical study, the optical package and post-processing algorithms are implemented on an actual device. Initial device characterization using this approach results in a device sensitivity of 12.4 nm/Pa.

This paper presents the fabrication, packaging, and characterization of a sapphire optical pressure sensor for hightemperature applications. Currently available instrumentation poses significant limitations on the ability to achieve realtime, continuous measurements in high-temperature environments such as those encountered in industrial gas turbines and high-speed aircraft. The fiber-optic lever design utilizes the deflection of a circular platinum-coated sapphire diaphragm to modulate the light reflected back to a single send/receive sapphire optical fiber. The 7 mm diameter, 50 μm thick diaphragm is attached using a novel thermocompression bonding process based on spark plasma sintering technology. Bonds using platinum as an intermediate layer are achieved at a temperature of 1200°C with a hold time of 5 min. Initial characterization of the bond interface using a simple tensile test indicates a bond strength in excess of 12 MPa. Analysis of the buckled diaphragm after bonding is also presented. The packaged sensor enables continuous operation up to 900°C. Room-temperature characterization reveals a first resonance of 18.2 kHz, a flat-band sensitivity of -130 dB re 1 V/Pa (0.32 μV/Pa) from 4-20 kHz, a minimum detectable pressure of 3.8 Pa, and a linear response up to 169 dB at 1.9 kHz.

To satisfy the performance and reliability requirement of a MEMS based harsh environment sensor, the sensor development needs to depart from the classic method of single-discipline technology improvement. In this paper, the authors will describe a Microsystem-based design methodology which considers simultaneous multiple technology domain interaction and achieves performance optimization at the system level to address the harsh environment sensing challenge. This is demonstrated through specific examples of investigating a robust MEMS gyroscope suitable for high temperature and high vibration environments such as down-hole drilling for Oil and Gas applications. In particular, the different mechanisms of temperature-induced errors in MEMS gyroscope are discussed. The error sources include both the direct impact of the gyroscope dynamics by temperature and the indirect perturbation by temperature-induced package stress. For vibration and shock induced failure, the error contributions from the low frequency and high frequency contents are discussed. Different transducer designs with equivalent rate sensitivity can vary with several orders of magnitude in terms of the susceptibility to mechanical vibration. Also shown are the complex interactions among the gyroscopic transducer, packaging and the control electronics, resulting from these temperature and vibration error sources. The microsystem-based design methodology is able to capture such complex interactions and improve the gyroscope temperature and vibration performance. In contrast to other efforts in harsh environment sensing which focus on specific technology domains, the authors strive to demonstrate the need and advantage of addressing MEMS performance and reliability in harsh environment from a microsystem perspective.

For enhanced or Engineered Geothermal Systems (EGS) geothermal brine is pumped to the surface via the production wells, the heat extracted to turn a turbine to generate electricity, and the spent brine re-injected via injection wells back underground. If designed properly, the subsurface rock formations will lead this water back to the extraction well as heated brine. Proper monitoring of these geothermal reservoirs is essential for developing and maintaining the necessary level of productivity of the field. Chemical tracers are commonly used to characterize the fracture network and determine the connectivity between the injection and production wells. Currently, most tracer experiments involve injecting the tracer at the injection well, manually collecting liquid samples at the wellhead of the production well, and sending the samples off for laboratory analysis. While this method provides accurate tracer concentration data at very low levels of detection, it does not provide information regarding the location of the fractures which were conducting the tracer between wellbores. Sandia is developing a high-temperature electrochemical sensor capable of measuring tracer concentrations and pH downhole on a wireline tool. The goal of this effort is to collect real-time pH and ionic tracer concentration data at temperatures up to 225 °C and pressures up to 3000 psi. In this paper, a prototype electrochemical sensor and the initial data obtained will be presented detailing the measurement of iodide tracer concentrations at high temperature and pressure in a newly developed laboratory scale autoclave.

Nowadays, magnetoresistive (MR) sensors are used in a wide range of applications. In general, the MR-effect describes the change of the electrical resistance in an external magnetic field. MR sensors are not only used for measuring magnetic fields and rotational or linear motion, but also for non-contact switching applications and furthermore for highly dynamic current measurement. This is largely the result of increasingly complex demands on the sensors for e.g. high performance electrical drives. The sensors must not only be accurate and dynamic, but must also be robust under difficult operating conditions and exhibit very high reliability. Due to their physical working principle and their small size, MR sensors are especially suited to work in harsh environments like high or low temperature, radiation, pressure or mechanical shock. This paper describes the principle of operation, manufacturing process and benefits of MR sensors. This will be followed by a description of practical application examples from the automotive, oil and gas, renewable energy and space fields, where MR sensors are successfully applied in very small envelopes at very low /very high temperatures, under high pressure, high mechanical loading and under strong radiation.

The Planetary Atmospheres Minor Species Sensor (PAMSS) is an ultra-trace gas sensor. This paper reports its transition from a Technical Readiness Level of 4 (TRL4) to TRL 5 and an established path forward to TRL6. This report describes tests of PAMSS in chambers that simulate a balloon flight to 30 km. Lessons learned inform a number of improvements, which are being implemented for a balloon flight planned for June 2014.

Laser-based instruments are enabling a new generation of scientific instruments for space environments such as those used in the exploration of Mars. The lasers must be robust and able to withstand the harsh environment of space, including radiation exposure. Quantum cascade lasers (QCLs), which are semiconductor lasers that emit in the infrared spectral region, offer the potential for the development of novel laser-based instruments for space applications. The performance of QCLs after radiation exposure, however, has not been reported. We report on work to quantify the performance of QCLs after exposure to two different radiation sources, 64 MeV protons and Cobalt-60 gamma rays, at radiation levels likely to be encountered during a typical space flight mission. No significant degradation in threshold current or slope efficiency is observed for any of the seven Fabry-Perot QCLs that are tested.

Many techniques using high frequency modulation have been proposed to reduce the effects of 1/f noise in tunable diode-laser absorption spectroscopy (TDLAS). The instruments and devices used by these techniques are not suitable for space applications that require small, low mass and low power instrumentation. A new noise estimation technique has already been proposed and validated for two lasers to reduce the effect of 1/f noise at lower frequencies. This paper extends the noise estimation technique and applies it using one distribution feedback (DFB) laser diode. In this method a DFB laser diode is excited at two slightly different frequencies, giving two different harmonics that can be used to estimate the total noise in the measurement. Simulations and experimental results on ammonia gas validate that the 1/f noise is effectively reduced by the noise estimation technique using one laser. Outdoor experimental results indicate that the effect of 1/f noise is reduced to more than 1/4 its normal value.