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PROCEEDINGS VOLUME 6923

Advances in Resist Materials and Processing Technology XXV
For the purchase of this volume in printed format, please visit Proceedings.com

Volume Details

Volume Number: 6923
Date Published: 24 April 2008

Table of Contents
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Front Matter: Volume 6923
Author(s): Proceedings of SPIE
Rise of chemical amplification resists from laboratory curiosity to paradigm enabling Moore's law
Author(s): Hiroshi Ito
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The limitations of high-index resists for 193-nm hyper-NA lithography
Author(s): Gregory McIntyre; Daniel Sanders; Ratnam Sooriyakumaran; Hoa Truong; Robert Allen
Show Abstract
High-index resist for 193-nm immersion lithography
Author(s): Kazuya Matsumoto; Elizabeth Costner; Isao Nishimura; Mitsuru Ueda; C. Grant Willson
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Development of an operational high refractive index resist for 193nm immersion lithography
Author(s): Paul A. Zimmerman; Jeffrey Byers; Emil Piscani; Bryan Rice; Christopher K. Ober; Emmanuel P. Giannelis; Robert Rodriguez; Dongyan Wang; Andrew Whittaker; Idriss Blakey; Lan Chen; Bronwin Dargaville; Heping Liu
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Non-topcoat resist design for immersion process at 32-nm node
Author(s): Steven Wu; Aroma Tseng; Bill Lin; Chun Chi Yu; Bo-Jou Lu; Wen-Shiang Liao; Deyan Wang; Vaishali Vohra; Cheng Bai Xu; Stefan Caporale; George Barclay
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Self-segregating materials for immersion lithography
Author(s): Daniel P. Sanders; Linda K. Sundberg; Phillip J. Brock; Hiroshi Ito; Hoa D. Truong; Robert D. Allen; Gregory R. McIntyre; Dario L. Goldfarb
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Development and evaluation of 193nm immersion generation-three fluid candidates
Author(s): Paul A. Zimmerman; Jeffrey Byers; Bryan Rice; Christopher K. Ober; Emmanuel P. Giannelis; Robert Rodriguez; Dongyan Wang; Naphtali O’Connor; Xuegong Lei; Nicholas J. Turro; Vladimir Liberman; Stephen Palmacci; Mordechai Rothschild; Neal Lafferty; Bruce W. Smith
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New high-index fluids: exploiting anomalous dispersion for immersion lithography
Author(s): Elizabeth A. Costner; Kazuya Matsumoto; Brian K. Long; J. Christopher Taylor; William Wojtczak; C. Grant Willson
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A new class of low bake resists for 193-nm immersion lithography
Author(s): Ratnam Sooriyakumaran; Richard DiPietro; Hoa Truong; Phillip Brock; Robert Allen; Luisa Bozano; Irene Popova; Wu-Song Huang; Rex Chen; Mahmoud Khojasteh; Pushkara Rao Varanasi
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Process development for high scan speed ArF immersion lithography
Author(s): Nobuji Matsumura; Norihiko Sugie; Kentaro Goto; Koichi Fujiwara; Yoshikazu Yamaguchi; Hirokazu Tanizaki; Katsushi Nakano; Tomoharu Fujiwara; Shinya Wakamizu; Hirofumi Takeguchi; Hiroshi Arima; Hideharu Kyoda; Kosuke Yoshihara; Junichi Kitano
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Immersion resist process for 32-nm node logic devices
Author(s): Tatsuhiko Ema; Koutaro Sho; Hiroki Yonemitsu; Yuriko Seino; Hiroharu Fujise; Akiko Yamada; Shoji Mimotogi; Yosuke Kitamura; Satoshi Nagai; Kotaro Fujii; Takashi Fukushima; Toshiaki Komukai; Akiko Nomachi; Tsukasa Azuma; Shinichi Ito
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Development of materials and processes for double patterning toward 32-nm node 193-nm immersion lithography process
Author(s): Shinji Tarutani; Hideaki Tsubaki; Shinichi Kanna
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Resist freezing process for double exposure lithography
Author(s): Kuang-Jung Rex Chen; Wu-Song Huang; Wai-Kin Li; P. Rao Varanasi
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Sub-40-nm half-pitch double patterning with resist freezing process
Author(s): Masafumi Hori; Tomoki Nagai; Atsushi Nakamura; Takayoshi Abe; Gouji Wakamatsu; Tomohiro Kakizawa; Yuusuke Anno; Makoto Sugiura; Shiro Kusumoto; Yoshikazu Yamaguchi; Tsutomu Shimokawa
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Rigorous physical modeling of a materials-based frequency doubling lithography process
Author(s): Stewart A. Robertson; John J. Biafore; Trey Graves; Mark D. Smith
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Novel molecular resist based on an amorphous truxene derivative
Author(s): Shigeki Hattori; Satoshi Saito; Koji Asakawa; Takeshi Koshiba; Tetsuro Nakasugi
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Single molecule chemically amplified resists based on ionic and non-ionic PAGs
Author(s): Richard A. Lawson; Cheng-Tsung Lee; Wang Yueh; Laren Tolbert; Clifford L. Henderson
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Surface roughness of molecular resist for EUV lithography
Author(s): Minoru Toriumi; Koji Kaneyama; Shinji Kobayashi; Toshiro Itani
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Chemically amplified fullerene resists for e-beam lithography
Author(s): J. Manyam; F. P. Gibbons; S. Diegoli; M. Manickam; J. A. Preece; R. E. Palmer; A. P. G. Robinson
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Chemically amplified molecular resist based on fullerene derivative for nanolithography
Author(s): Hiroki Yamamoto; Takahiro Kozawa; Seiichi Tagawa; Tomoyuki Ando; Katsumi Ohmori; Mitsuru Sato; Junichi Onodera
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New architectures for high resolution patterning
Author(s): Anuja De Silva; Nelson Felix; Drew Forman; Jing Sha; Christopher K. Ober
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Base quencher effects in chemically amplified resist at sub-30-nm fabrication
Author(s): Takahiro Kozawa; Seiichi Tagawa; Julius Joseph Santillan; Minoru Toriumi; Toshiro Itani
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Mesoscale simulation of molecular glass photoresists: effect of PAG loading and acid diffusion coefficient
Author(s): Richard A. Lawson; Cheng-Tsung Lee; Wang Yueh; Laren Tolbert; Clifford L. Henderson
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A comprehensive resist model for the prediction of line-edge roughness material and process dependencies in optical lithography
Author(s): Thomas Schnattinger; Andreas Erdmann
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Monte Carlo simulation on line edge roughness after development in chemically amplified resist of post-optical lithography
Author(s): Akinori Saeki; Takahiro Kozawa; Seiichi Tagawa; Heidi B. Cao; Hai Deng; Michael J. Leeson
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Extraction and identification of resist modeling parameters for EUV lithography
Author(s): Carlos A. Fonseca; Roel Gronheid; Steven A. Scheer
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Etching spin-on trilayer masks
Author(s): David J. Abdallah; Shinji Miyazaki; Aritaka Hishida; Allen Timko; Douglas McKenzie; Dalil Rahman; WooKyu Kim; Lyudmila Pylneva; Hengpeng Wu; Ruzhi Zhang; Ping-Hung Lu; Mark Neisser; Ralph Dammel
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Graded spin-on organic bottom antireflective coating for high NA lithography
Author(s): Dario L. Goldfarb; Sean D. Burns; Libor Vyklicky; Dirk Pfeiffer; Anthony Lisi; Karen Petrillo; John Arnold; Daniel P. Sanders; Aleksandra Clancy; Robert N. Lang; Robert D. Allen; David R. Medeiros; Dah Chung Owe-Yang; Kazumi Noda; Seiichiro Tachibana; Shozo Shirai
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A high-Si content middle layer for ArF trilayer patterning
Author(s): Joseph Kennedy; Songyuan Xie; Ronald Katsanes; Kyle Flanigan; Sudip Mukhopadhyay; Benjamin Wu; Edward W. Rutter Jr.; Mark Slezak
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Anti-reflective coating for multipatterning lithography
Author(s): Douglas J. Guerrero; Steve Gibbons; Joyce Lowes; Ramil Mercado
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A modified bilayer resist approach for 45 nm flash lithography
Author(s): Brian Osborn; Gloria Quinto; Cristina Cheung; Fei Wang; Calvin Gabriel; Fred Cheung; Frank Tsai; Anna Minvielle
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A high-throughput contact-hole resolution metric for photoresists: full-process sensitivity study
Author(s): Christopher N. Anderson; Patrick P. Naulleau
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Resist development to improve flare issue of EUV lithography
Author(s): Makiko Irie; Takako Suzuki; Takeyoshi Mimura; Takeshi Iwai
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Synthesis and properties of new anionic photoacid generators bound polymer resists for e-beam and EUV lithography
Author(s): Mingxing Wang; Cheng-Tsung Lee; Clifford L. Henderson; Wang Yueh; Jeanette M. Roberts; Kenneth E. Gonsalves
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EUV resist development in Selete
Author(s): Daisuke Kawamura; Koji Kaneyama; Shinji Kobayashi; Julius Joseph S. Santillan; Toshiro Itani
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Photoresist induced contrast loss and its impact on EUV imaging extendibility
Author(s): Koen van Ingen Schenau; Steve Hansen; Bill Pierson; Jan van Schoot
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Finite element modeling of PAG leaching and water uptake in immersion lithography resist materials
Author(s): Ben M. Rathsack; Steven Scheer; Yuhei Kuwahara; Junichi Kitano; Roel Gronheid; Christina Baerts
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A new technique for studying photo-acid generator chemistry and physics in polymer films using on-wafer ellipsometry and acid-sensitive dyes
Author(s): Cheng-Tsung Lee; Wang Yueh; Jeanette M. Roberts; Todd R Younkin; Clifford L. Henderson
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A comparison of the reaction-diffusion kinetics between model-EUV polymer and molecular-glass photoresists
Author(s): Shuhui Kang; Kristopher Lavery; Kwang-Woo Choi; Vivek M. Prabhu; Wen-Li Wu; Eric K. Lin; Anuja De Silva; Nelson Felix; Christopher Ober
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Lactones in 193 nm resists: What do they do?
Author(s): Hiroshi Ito; Hoa D. Truong; Phil J. Brock
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Polymer matrix effects on acid generation
Author(s): Theodore H. Fedynyshyn; Russell B. Goodman; Jeanette Roberts
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Acid-base equilibrium in chemically amplified resist
Author(s): Kenichiro Natsuda; Takahiro Kozawa; Kazumasa Okamoto; Seiichi Tagawa
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Ionic photo-acid generators containing functionalized semifluorinated sulfonates for high-resolution lithography
Author(s): Yi Yi; Ramakrishnan Ayothi; Christopher K. Ober; Wang Yueh; Heidi Cao
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Non-chemically amplified resists for 193 nm lithography
Author(s): Isao Nishimura; William H. Heath; Kazuya Matsumoto; Wei-Lun Jen; Saul S. Lee; Colin Neikirk; Tsutomu Shimokawa; Koji Ito; Koichi Fujiwara; C. Grant Willson
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Post-lithography characterization of ArF resists for 45 nm node implant layers and beyond
Author(s): A. Pikon; G. Pohlers; S. Derrough; F. Milesi; J. Foucher
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LWR reduction in low-k1 ArF-immersion lithography
Author(s): Kentaro Matsunaga; Tomoya Oori; Hirokazu Kato; Daisuke Kawamura; Eishi Shiobara; Yuichiro Inatomi; Tetsu Kawasaki; Mitsuaki Iwashita; Shinichi Ito
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All-dry photoresist systems: physical vapor deposition of molecular glasses
Author(s): Frauke Pfeiffer; Christian Neuber; Hans-Werner Schmidt
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Water-developable negative-tone single-molecule resists: high-sensitivity nonchemically amplified resists
Author(s): Richard A. Lawson; Cheng-Tsung Lee; Wang Yueh; Laren Tolbert; Clifford L. Henderson
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Adamantane-based molecular glass resist for 193-nm lithography and beyond
Author(s): Shinji Tanaka; Nobuaki Matsumoto; Hidetoshi Ohno; Naoyoshi Hatakeyama; Katsuki Ito; Kazuya Fukushima; Hiroaki Oizumi; Iwao Nishiyama
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Molecular glass photoresists based on acidolysis of acetal compounds
Author(s): Liyuan Wang; Xiaoxiao Zhai; Na Xu
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Molecular glass resists for next generation lithography
Author(s): Anuja De Silva; Nelson Felix; Jing Sha; Jin-Kyun Lee; Christopher K. Ober
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The effect of EUV molecular glass architecture on the bulk dispersion of a photo-acid generator
Author(s): David L. VanderHart; Anuja De Silva; Nelson Felix; Vivek M. Prabhu; Christopher K. Ober
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Molecular resists for EUV and EB lithography
Author(s): Ichiki Takemoto; Nobuo Ando; Kunishige Edamatsu; Youngjoon Lee; Masayuki Takashima; Hiroyuki Yokoyama
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Options for high index fluids for third generation 193i lithography
Author(s): Seth Kruger; Srividya Revuru; Shao-Zhong Zhang; Dimitri D. Vaughn II; Eric Block; Paul Zimmerman; Robert L. Brainard
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High refractive-index resists composed of anionic photoacid generator (PAG) bound polymers for 193 nm immersion lithography
Author(s): Kenneth E. Gonsalves; Mingxing Wang; Narahari S. Pujari
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Application technology of stacked film with highly controlled edge structure
Author(s): Katsunori Ichino; Keiji Tanouchi; Tomohiro Iseki; Nobuhiro Ogata; Taro Yamamoto; Kosuke Yoshihara; Akihiro Fujimoto
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The study of defect control and patterning performance for top coating free resist process
Author(s): Myoung-Soo Kim; Hun-Rok Jung; Hae-Wook Ryu; Hong-Goo Lee; Sung-Mok Hong; Hak-Joon Kim; Sung-Nam Park; Myung-Goon Gil; Hyo-Sang Kang
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Highly hydrophobic materials for ArF immersion lithography
Author(s): Yoko Takebe; Naoko Shirota; Takashi Sasaki; Koichi Murata; Osamu Yokokoji
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Improvements of adhesion and hydrophobicity of wafer bevel in water immersion lithography
Author(s): Takeo Ishibash; Mamoru Terai; Takuya Hagiwara; Teruhiko Kumada; Tetsuro Hanawa; Yoko Takebe; Osamu Yokokoji; Tomoharu Fujiwara; Hiroshi Akiyama
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Process manufacturability evaluation for next generation immersion technology node
Author(s): M. Enomoto; T. Shimoaoki; T. Otsuka; S. Hatakeyama; K. Nafus; R. Naito; Y. Terashita; T. Shibata; H. Kosugi; M. Jyousaka; J. Mallmann; R. Maas; M. Blanco Mantecon; E. van Setten; J. Finders; S. Wang; C. Zoldesi
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Formation mechanism of 193nm immersion defects and defect reduction strategies
Author(s): Yayi Wei; Stefan Brandl; Frank Goodwin
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Synthesis of novel alpha-fluoroacrylates and related polymers for immersion lithography
Author(s): Tsuneo Yamashita; Takuji Ishikawa; Masamichi Morita; Takashi Kanemura; Hirokazu Aoyama
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Characterization of resist and topcoat properties for immersion lithography
Author(s): Kaveri Jain; Yoshi Hishiro
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A lithographic and process assessment of photoresist stabilization for double-patterning using 172-nm photoresist curing
Author(s): Nikolaos Bekiaris; Hiram Cervera; Junyan Dai; Ryoung-han Kim; Alden Acheta; Thomas Wallow; Jongwook Kye; Harry J. Levinson; Thomas Nowak; James Yu
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Ion implantation as insoluble treatment for resist stacking process
Author(s): Hiroko Nakamura; Takeshi Shibata; Katsumi Rikimaru; Sanae Ito; Satoshi Tanaka; Soichi Inoue
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Double patterning study with inverse lithography
Author(s): Sang-Kon Kim
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Photons, electrons, and acid yields in EUV photoresists: a progress report
Author(s): Robert Brainard; Elsayed Hassanein; Juntao Li; Piyush Pathak; Brad Thiel; Franco Cerrina; Richard Moore; Miguel Rodriguez; Boris Yakshinskiy; Elena Loginova; Theodore Madey; Richard Matyi; Matt Malloy; Andrew Rudack; Patrick Naulleau; Andrea Wüest; Kim Dean
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Ellipsometry studies of the kinetic of deprotection of thin 193 nm positive tone resist film
Author(s): H. Ridaoui; S. Derrough; C. Sourd; H. Trouve; A. Pikon; J. H. Tortai
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Process-induced bias: a study of resist design and process implications
Author(s): Carlos Fonseca; Steven Scheer; Michael Carcasi; Tsuyoshi Shibata; Takahisa Otsuka
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ArF photoresist formulation influence on elliptical contact shape when using a dipole illumination
Author(s): E. Tenaglia; J. Ronsmans; D. De Simone; T. Kimura; G. Cotti
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Dynamics of poly(4-hydroxystyrene) radical cation
Author(s): Kazumasa Okamoto; Takahiro Kozawa; Seiichi Tagawa
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Dependence of acid generation efficiency on acid molecular structure and concentration of acid generator in chemically amplified EUV resist
Author(s): Ryo Hirose; Takahiro Kozawa; Seiichi Tagawa; Toshiyuki Kai; Tsutomu Shimokawa
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Characterization of the latent image to developed image in model EUV photoresists
Author(s): John T. Woodward; Kwang-Woo Choi; Vivek M. Prabhu; Shuhui Kang; Kristopher A. Lavery; Wen-li Wu; Michael Leeson; Anuja De Silva; Nelson M. Felix; Christopher K Ober
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Study of de-protection reaction analysis system for EUV lithography
Author(s): A. Sekiguchi; Y. Kono
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RAFT technology for the production of advanced photoresist polymers
Author(s): Michael T. Sheehan; William B. Farnham; Hiroshi Okazaki; James R. Sounik; George Clark
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Effect of PAG and matrix structure on PAG acid generation behavior under UV and high-energy radiation exposure
Author(s): Cheng-Tsung Lee; Mingxing Wang; Kenneth E. Gonsalves; Wang Yueh; Jeanette M. Roberts; Todd R. Younkin; Clifford L. Henderson
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Plasma etch properties of organic BARCs
Author(s): Runhui Huang; Michael Weigand
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The design and evaluation of high barrier performance organic BARC material
Author(s): Tomohisa Ishida; Rikimaru Sakamoto; Yoshiomi Hiroi; Yasushi Sakaida; Takahiro Hamada
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Development of high-performance tri-layer material
Author(s): D. C. Owe-Yang; Toshiharu Yano; Takafumi Ueda; Motoaki Iwabuchi; Tsutomu Ogihara; Shozo Shirai
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High-etch-rate low-bias bow outgassing BARC via-filling materials for 193-nm ArF lithographic process
Author(s): Huirong Yao; Zhong Xiang; Salem Mullen; Jian Yin; Walter Liu; Jianhui Shan; Elleazar Gonzalez; Guanyang Lin; Mark Neisser
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Advanced ultraviolet cross-link process and materials for global planarization
Author(s): Satoshi Takei; Yusuke Horiguchi; Tomoya Ohashi; Bang-Ching Ho; Yasuyuki Nakajima; Yuichi Mano; Makoto Muramatsu; Mitsuaki Iwashita; Katsuhiro Tsuchiya; Akira Samura; Yoshiaki Yamada; Tadayuki Yamaguchi
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Gap-fill type HSQ/ZEP520A bilayer resist process–(I): HSQ-coated ZEP520A CD shrinkage for 32-nm trench patterns
Author(s): Wei-Su Chen; Ming-Jer Kao; Ming-Jinn Tsai
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Challenges of non-PFOS top antireflective coating material
Author(s): Shu-Hao Hsu; Inge Vermeir; Matthias Scholze; Matthias Voigt; Janine Gierth; Armelle Mittermeier; Iris Mäge; Lars Voelkel
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KrF bilayer resist defects: cause, analysis, and reduction
Author(s): Brian Osborn; Gloria Quinto; Zhanping Zhang; Cherry Tang; Stacy Sakai; Go Nagatani; Anna Minvielle
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Sub-45nm resist process using stacked-mask process
Author(s): Yuriko Seino; Katsutoshi Kobayashi; Koutaro Sho; Hirokazu Kato; Seiro Miyoshi; Keisuke Kikutani; Junko Abe; Hisataka Hayashi; Tokuhisa Ohiwa; Yasunobu Oonishi; Shinichi Ito
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High-etch-rate bottom-antireflective coating and gap-fill materials using dextrin derivatives in via first dual-damascene lithography process
Author(s): Satoshi Takei; Yasushi Sakaida; Tetsuya Shinjo; Keisuke Hashimoto; Yasuyuki Nakajima
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Silicon-based anti-reflective spin-on hardmask materials for 45 nm pattern of immersion ArF lithography
Author(s): Sang Kyun Kim; Hyeon Mo Cho; Sang Ran Koh; Mi-young Kim; Hui Chan Yoon; Yong-jin Chung; Jong Seob Kim; Tuwon Chang
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Optimization of BARC process for hyper-NA immersion lithography
Author(s): Kilyoung Lee; Junghyung Lee; Sungkoo Lee; Dongheok Park; Cheolkyu Bok; Seungchan Moon
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Development of new BARC for immersion process using hyper NA
Author(s): Hyo Jung Roh; Man Ho Han; Sang Jeoung Kim; Hyun Jin Kim; Jaehyun Kim; Keun Kyu Kong; Ki Lyoung Lee; Sung Koo Lee; Dong Heok Park
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Novel spin-on organic hardmask with high plasma etch resistance
Author(s): Chang-Il Oh; Jin-Kuk Lee; Min-Soo Kim; Kyong-Ho Yoon; Hwan-Sung Cheon; Nataliya Tokareva; Jee-Yun Song; Jong-Seob Kim; Tu-Won Chang
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Dual-layer dye-filled developer-soluble BARCs for 193-nm lithography
Author(s): Jim D. Meador; Carol Beaman; Charlyn Stroud; Joyce A. Lowes; Zhimin Zhu; Douglas J. Guerrero; Ramil-Marcelo L. Mercado; David Drain
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Low out-gassing organic spin-on hardmask
Author(s): Shinya Minegishi; Nakaatsu Yoshimura; Mitsuo Sato; Yousuke Konno; Keiji Konno; Mark Slezak; Junichi Takahashi; Shigeru Abe; Yoshikazu Yamaguchi; Tsutomu Shimokawa
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Gap-fill type HSQ/ZEP520A bilayer resist process–(II): HSQ island and spacer formation
Author(s): Wei-Su Chen; Pei-Yi Gu; Ming-Jer Kao; Ming-Jinn Tsai
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Reflection control for immersion lithography at 45/32-nm nodes
Author(s): Wan-Ju Tseng; Ruei-Hung Hsu; Shu Huei Hou; Tzu-Huai Tseng; Bill Lin; Chun Chi Yu; Sue Ryeon Kim; Jeong Yun Yu; Gerald Wayton; Maurizio Ciambra; Suzanne Coley; David Praseuth; Nick Pugliano
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Second-generation radiation sensitive 193-nm developable bottom antireflective coatings (DBARC): recent results
Author(s): Francis Houlihan; Alberto Dioses; Lin Zhang; Joseph Oberlander; Alexandra Krawicz; Sumathy Vasanthan; Meng Li; Yayi Wei; PingHung Lu; Mark Neisser
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Effects of bake temperature and surface modifications on hardmask materials for trilayer applications
Author(s): Charles J. Neef; Jim Finazzo; Cheryl Nesbit; Michael Weigand
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A calibrated photoresist model for pattern prediction
Author(s): Yung Long Hung; Chun Cheng Liao; Chiang-Lin Shih; John J. Biafore; Stewart A. Robertson
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Fabrication of 32-nm contact/via hole by photolithographic-friendly method
Author(s): Tetsu Kawasaki; Satoru Shimura; Fumiko Iwao; Eiichi Nishimura; Masato Kushibiki; Kazuhide Hasebe; Michael Carcasi; Mark Somervell; Steven Scheer; Hidetami Yaegashi
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Evaluation of adamantane derivatives for chemically amplified resist: a comparison between ArF, EUV, and EB exposures
Author(s): Kikuo Furukawa; Shu Seki; Takahiro Kozawa; Seiichi Tagawa
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Leading-edge adamantyl polymers designed for 193 nm lithography
Author(s): Kazuya Fukushima; Shinji Tanaka; Nobuaki Matsumoto; Hidetoshi Ohno; Naoya Kawano; Hideki Yamane; Naoyoshi Hatakeyama; Katsuki Ito
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Wet trimming process for critical dimension reduction
Author(s): Sam X. Sun; Brian A. Smith; Anwei Qin
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Impact of HBr and Ar cure plasma treatments on 193nm photoresists
Author(s): Arnaud Bazin; Erwine Pargon; Xavier Mellhaoui; Damien Perret; Bénédicte Mortini; Olivier Joubert
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Molecular contamination control technologies for high volume production in high NA 193-nm lithography (phase II)
Author(s): Toshiro Nakano; Takashi Tanahashi; Akihiro Imai; Kazuki Yamana; Tainen Shimotsu
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Driving contact hole resolution to 45nm using novel process enhancement techniques
Author(s): W. Montgomery; S. Bennett; L. Huli; John Weeks; Angus Mackie
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Resist reflow process for arbitrary 32 nm node pattern
Author(s): Joon-Min Park; Ilsin An; Hye-Keun Oh
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Processing and modeling optimization for grayscale lithography
Author(s): Thomas Dillon; Mathew Zablocki; Janusz Murakowski; Dennis Prather
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Advanced resist process enabling implementation of CD controllability for 32 nm and beyond
Author(s): Satoru Shimura; Fumiko Iwao; Tetsu Kawasaki; Dunn Shannon; Yoshitsugu Tanaka; Hidetami Yaegashi; Yoshiaki Yamada
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Development of thick negative photoresists for electroplating applications
Author(s): Chunwei Chen; Robert Plass; Edward Ng; Sam Lee; Stephen Meyer; Georg Pawlowski; Rozalia Beica
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Synthesis and evaluation of novel resist monomers and copolymers for ArF lithography: Part II
Author(s): Osamu Nakayama; Takashi Fukumoto; Miki Tachibana; Junko Sato; Masahiko Kitayama; Tsuyoshi Kajiyashiki
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Line width roughness (LWR) performance of novel surface conditioner solutions for immersion lithography
Author(s): Bo Jou Lu; E. T. Liu; Anson Zeng; Aroma Tseng; Steven Wu; Bill Lin; Chun Chi Yu; Ling-Jen Meng; Manuel Jaramillo Jr.; Ming-Ching Liao
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Effect of nanofiltration on photochemical integrity
Author(s): H. Zhang; A. Wu; J. Wei; R. Buschjost
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Performance comparison of negative resists for copper rerouting and other electroplating applications
Author(s): Medhat Toukhy; Chunwei Chen; Margareta Paunescu; Georg Pawlowski
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Post develop stain defect reduction
Author(s): Masahiko Harumoto; Takuya Kuroda; Minoru Sugiyama; Akihiro Hisai
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Impact of surface treatment on resist reflow process
Author(s): Young-Je Yun; Jin-Ho Park; Hakyu Choi; Seung Ryong Park; Kwangseon Choi; Jea-Hee Kim; Jae-Won Han
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Achieving small dimensions with an environmentally friendly solvent: photoresist development using supercritical CO2
Author(s): Nelson M. Felix; Anuja De Silva; Jing Sha; Christopher K. Ober
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Wafer shape compensation at the track PEB for improved CD uniformity
Author(s): Timothy Michaelson; Junyan Dai; Lu Chen; Hiram Cervera; Brian Lue; Harald Herchen; Kim Vellore; Nikolaos Bekiaris
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Wafer warp caused by thick film resists acting as a permanent part of the device
Author(s): R. Leuschner; M. Franosch; T. Dow
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Characterization of array CD uniformity with respect to pattern density in 193nm dry photolithography
Author(s): Vishal Sipani; David A. Kewley; Kaveri Jain; Erik R. Byers; Bruce Daybell; Anthony Krauth
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Non-ionic photoacid generators for chemically amplified resists: chromophore effect on resist performance
Author(s): Yuichi Nishimae; Hitoshi Yamato; Toshikage Asakura; Masaki Ohwa
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The synthesis of novel ester acetal polymers and their application for chemically amplified positive i-line photoresist
Author(s): Liyuan Wang D.D.S.; Yongen Huo; Fanrong Kong
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Study for aluminum metal patterning process with oxide hardmask in 90-nm s-flash memory device fabrication
Author(s): Sang Il Hwang; Ki Jun Yun; Sang Wook Ryu; Kang Hyun Lee; Jae Won Han
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Defect reduction using new digital valve dispensing technology
Author(s): Garrett Standley; John Kasson; Brian Kidd
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Study for high voltage gate RIE process in LDI (LCD driver IC) device fabrication
Author(s): Min Gon Lee; Chung Kyung Jung; Sang Wook Ryu; Kang Hyun Lee; Jae Won Han
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Study of shallow trench isolation dry etching process using oxide hard mask and KrF photo-resist in 90 nm stand-alone flash device
Author(s): Eunsang Cho; Mingon Lee; Dongwon Shin; Sangil Hwang; Sangwook Ryu; Kanghyun Lee
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60-seconds puddle time: a tradition to overcome in CA resists: process optimization and defect elimination
Author(s): Eitan Shalom; Shaike Zeid
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Reflection control for line features of multiple pitches at hyper NA
Author(s): Michael Reilly; Michael Wagner; Warren Montgomery; Nick Pugliano; Stewart Robertson
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Improvement of 90nm technology VIA photo alignment through TiN hard mask removing above previous photo alignment mark area
Author(s): Wen-Shiang Liao; Hsin-Hung Lin; Yu-Huan Liu; Mao-Chyuan Tang; Sheng-Yi Huang; Cheng-Han Wu; Yue-Gie Liaw; Tung-Hung Chen; Tommy Shih; Kun-Ming Chen
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A comparison in dispense methodology for spray coat dispensing
Author(s): Joe Coulter; Brian Kidd; Jeff Hawks
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EUV resist outgassing analysis in Selete
Author(s): Julius Joseph Santillan; Shinji Kobayashi; Toshiro Itani
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EUV resist based on low molecular weight PHS
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