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PROCEEDINGS VOLUME 6519

Advances in Resist Materials and Processing Technology XXIV
Editor(s): Qinghuang Lin
For the purchase of this volume in printed format, please visit Proceedings.com

Volume Details

Volume Number: 6519
Date Published: 15 March 2007

Table of Contents
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Front Matter: Volume 6519
Author(s): Proceedings of SPIE
Identifying materials limits of chemically amplified photoresists
Author(s): Wen-li Wu; Vivek M. Prabhu; Eric K. Lin
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Emerging patterning materials: trends, challenges, and opportunities in patterning and materials by design
Author(s): Daniel J. C. Herr
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Fluoro-alcohol materials with tailored interfacial properties for immersion lithography
Author(s): Daniel P. Sanders; Linda K. Sundberg; Ratnam Sooriyakumaran; Phillip J. Brock; Richard A. DiPietro; Hoa D. Truong; Dolores C. Miller; Margaret C. Lawson; Robert D. Allen
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Development of non-topcoat resist polymers for 193-nm immersion lithography
Author(s): Naoko Shirota; Yoko Takebe; Shu-Zhong Wang; Takashi Sasaki; Osamu Yokokoji
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Building an immersion topcoat from the ground up: materials perspective
Author(s): Mahmoud Khojasteh; Irene Popova; P. Rao Varanasi; Linda Sundberg; C. Robinson; D. Corliss; Margaret Lawson; G. Dabbagh; M. Slezak; Matthew Colburn; K. Petrillo
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Novel materials design for immersion lithography
Author(s): Kenji Wada; Shinichi Kanna; Hiromi Kanda
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Novel high-index resists for 193-nm immersion lithography and beyond
Author(s): Idriss Blakey; Lan Chen; Bronwin Dargaville; Heping Liu; Andrew Whittaker; Will Conley; Emil Piscani; Georgia Rich; Alvina Williams; Paul Zimmerman
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Screening of second-generation high-index liquids
Author(s): Eric Hendrickx; Sergei Postnikov; Philippe Foubert; Roel Gronheid; ByeongSoo Kim
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High-refractive index material design for ArF immersion lithography
Author(s): Taiichi Furukawa; Takanori Kishida; Takashi Miyamatsu; Kazuo Kawaguchi; Kinji Yamada; Tetsuo Tominaga; Mark Slezak; Katsuhiko Hieda
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Adapting immersion exposure to mass production by adopting a cluster of novel resist-coating/developing and immersion-exposure equipment
Author(s): Tomoharu Fujiwara; Jun Ishikawa; Tadamasa Kawakubo; Yuuki Ishii; Hideharu Kyoda; Shinya Wakamizu; Takeshi Shimoaoki
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Immersion defectivity control by optimizing immersion materials and processes
Author(s): Katsushi Nakano; Hiroshi Kato; Soichi Owa
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Measurement and evaluation of water uptake by resists, top coats, stacks, and correlation with watermark defects
Author(s): Philippe Foubert; Michael Kocsis; Roel Gronheid; Shinji Kishimura; Akimasa Soyano; Kathleen Nafus; Nickolay Stepanenko; Johan De Backer; Nadia Vandenbroeck; Monique Ercken
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High-performance 193-nm photoresists based on fluorosulfonamide
Author(s): Wenjie Li; Kuang-Jung Chen; Ranee Kwong; Margaret C. Lawson; Mahmoud Khojasteh; Irene Popova; P. Rao Varanasi; Tsutomu Shimokawa; Yoshikazu Yamaguchi; Shiro Kusumoto; Makoto Sugiura; Takanori Kawakami; Mark Slezak; Gary Dabbagh; Zhi Liu
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Novel diamantane polymer platform for enhanced etch resistance
Author(s): Munirathna Padmanaban; Srinivasan Chakrapani; Guanyang Lin; Takanori Kudo; Deepa Parthasarathy; Dalil Rahman; Clement Anyadiegwu; Charito Antonio; Ralph R. Dammel; Shenggao Liu; Frederick Lam; Anthony Waitz; Masao Yamagchi; Takayuki Maehara
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Hybrid optical: electron-beam resists
Author(s): D. M. Lennon; S. J. Spector; T. H. Fedynyshyn; T. M. Lyszczarz; M. Rothschild; J. Thackeray; K. Spear-Alfonso
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Evaluation of immersion lithography processes for 55-nm node logic devices
Author(s): Taisaku Nakata; Teruhiko Kodama; Motofumi Komori; Naka Onoda; Takayuki Uchiyama
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Photo-deprotection resist based on photolysis of o-nitrobenzyl phenol ether; challenge to half-pitch 22 nm using near-field lithography
Author(s): T. Ito; A. Terao; Y. Inao; T. Yamaguchi; N. Mizutani
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Enhancing photoresist performance with an adhesion promoting photo-acid generator
Author(s): Shalini Sharma; Robert P. Meagley
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Second-generation radiation sensitive developable bottom anti-reflective coatings (DBARC) and implant resists approaches for 193-nm lithography
Author(s): Francis Houlihan; Alberto Dioses; Medhat Toukhy; Andrew Romano; Joseph Oberlander; HengPeng Wu; Salem Mullen; Alexandra Krawicz; PingHung Lu; Mark Neisser
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Spin-on trilayer approaches to high NA 193nm lithography
Author(s): D. J. Abdallah; D. McKenzie; A. Timko; A. Dioses; F. Houlihan; D. Rahman; S. Miyazaki; R. Zhang; W. Kim; H. Wu; L. Pylneva; P.-H. Lu; M. Neisser; R. R. Dammel; J. J. Biafore
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Progress of hard mask material for multi-layer stack application
Author(s): Hisanobu Harada; Koji Yonemura; Takeshi Tanaka; Daisuke Kawana; Naoki Yamashita; Katsumi Ohmori
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Silicon-based anti-reflective spin-on hardmask materials with improved storage stability for 193-nm lithography
Author(s): Sang Kyun Kim; Sang Hak Lim; Do-hyeon Kim; Sang Ran Koh; Mi-young Kim; Hui Chan Yoon; Dong Seon Uh; Jong Seob Kim; Tuwon Chang
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Novel developers for positive tone EUV photoresists
Author(s): Geeta Sharma; Shalini Sharma; Michael Rattner; Robert P. Meagley; Masato Tanaka; Tsutomu Shimokawa; Hikaru Sugita; Tina Wang; Atsushi Shiota
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The application of high-refractive index photoresist for 32-nm device level imaging
Author(s): Will Conley
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Performance of chemically amplified resists at half-pitch of 45 nm and below
Author(s): Yayi Wei; Markus Bender; Wolf-Dieter Domke; Antje Laessig; Michael Sebald; Sven Trogisch; David Back
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Evaluation of ArF lithography for 45-nm node implant layers
Author(s): T. C. Bailey; J. Maynollo; J. J. Perez; I. Popova; B. Zhang
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Characterization of photo-acid redeposition in 193-nm photoresists
Author(s): Thomas Wallow; Marina Plat; Zhanping Zhang; Brian MacDonald; Joffre Bernard; Jeremias Romero; Bruno La Fontaine; Harry J. Levinson
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A novel plasma-assisted shrink process to enlarge process windows of narrow trenches and contacts for 45-nm node applications and beyond
Author(s): Maaike Op de Beeck; Janko Versluijs; Zsolt Tőkei; Steven Demuynck; J.-F. De Marneffe; Werner Boullart; Serge Vanhaelemeersch; Helen Zhu; Peter Cirigliano; Elizabeth Pavel; Reza Sadjadi; Jisoo Kim
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A novel method for characterizing resist performance
Author(s): D. Van Steenwinckel; R. Gronheid; J. H. Lammers; A. M. Meyers; F. Van Roey; P. Willems
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The tri-lateral challenge of resolution, photospeed, and LER: scaling below 50nm?
Author(s): R. L. Bristol
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PAG segregation during exposure affecting innate material roughness
Author(s): Theodore H. Fedynyshyn; David K. Astolfi; Alberto Cabral; Jeanette Roberts
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Mechanistic simulation of line-edge roughness
Author(s): John J. Biafore; Mark D. Smith; Stewart A. Robertson; Trey Graves
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The characterization of photoresist for accurate simulation beyond Gaussian diffusion
Author(s): Lei Wang; Peng Wu; Qiang Wu; Hua Ding; Xin Li; Changjiang Sun
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Direct measurement of the in-situ developed latent image: the residual swelling fraction
Author(s): Vivek M. Prabhu; Bryan D. Vogt; Shuhui Kang; Ashwin Rao; Eric K. Lin; Sushil K. Satija; Karen Turnquest
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Fundamental limits to EUV photoresist
Author(s): Gregg M. Gallatin; Patrick Naulleau; Robert Brainard
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Etch resistance: comparison and development of etch rate models
Author(s): Damien Perret; Cecily E. Andes; Kap-Soo Cheon; Mani Sobhian; Charles R. Szmanda; George G. Barclay; Peter Trefonas
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Dissolution behavior of resist polymers studied by Quartz-Crystal-Microbalance method II
Author(s): Minoru Toriumi; Fumihiko Okabe; Masahiko Kitayama
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Component segregation in model chemically amplified resists
Author(s): John T. Woodward; Theodore H. Fedynyshyn; David K. Astolfi; Susan Cann; Jeanette M. Roberts; Michael J. Leeson
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FTIR measurements of compositional heterogeneities
Author(s): Shuhui Kang; Bryan D. Vogt; Wen-li Wu; Vivek M. Prabhu; David L. VanderHart; Ashwin Rao; Eric K. Lin; Karen Turnquest
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Changes in resist glass transition temperatures due to exposure
Author(s): Theodore H. Fedynyshyn; Indira Pottebaum; Alberto Cabral; Jeanette Roberts
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A study on the material design for the reduction of LWR
Author(s): Hideaki Tsubaki; Tsukasa Yamanaka; Fumiyuki Nishiyama; Koji Shitabatake
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Line-edge roughness in 193-nm resists: lithographic aspects and etch transfer
Author(s): Thomas Wallow; Alden Acheta; Yuansheng Ma; Adam Pawloski; Scott Bell; Brandon Ward; Cyrus Tabery; Bruno La Fontaine; Ryoung-han Kim; Sarah McGowan; Harry J. Levinson
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Impact of line-width roughness on Intel’s 65-nm process devices
Author(s): Manish Chandhok; Suman Datta; Daniel Lionberger; Scott Vesecky
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Impact of curing kinetics and materials properties on imprint characteristics of resists for UV nano-imprint lithography
Author(s): Frances A. Houle; Ann Fornof; Ratnam Sooriyakumaran; Hoa Truong; Dolores C. Miller; Martha I. Sanchez; Blake Davis; Teddie Magbitang; Robert D. Allen; Mark W. Hart; Geraud Dubois
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Material design of negative-tone polyphenol resist for EUV and EB lithography
Author(s): Kyoko Kojima; Shigeki Mori; Daiju Shiono; Hideo Hada; Junichi Onodera
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Photosensitivity and line-edge roughness of novel polymer-bound PAG photoresists
Author(s): Cheng-Tsung Lee; Mingxing Wang; Nathan D. Jarnagin; Kenneth E. Gonsalves; Jeanette M. Roberts; Wang Yueh; Clifford L. Henderson
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Novel anionic photoacid generator (PAGs) and photoresist for sub-50-nm patterning by EUVL and EBL
Author(s): Mingxing Wang; Cheng-Tsung Lee; Clifford L. Henderson; Wang Yueh; Jeanette M. Roberts; Kenneth E. Gonsalves
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Self-aligned, self-assembled organosilicate line patterns of ~20nm half-pitch from block-copolymer mediated self assembly
Author(s): Ho-Cheol Kim; Joy Cheng; Charles Rettner; Oun-Ho Park; Robert Miller; Mark Hart; Linnea Sundström; Ying Zhang
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Gray-scale lithography of photosensitive polyimide and its graphitization
Author(s): S. Akbar; E. Imhoff; F. Kub
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A novel top surface imaging approach utilizing direct-area selective atomic layer deposition of hardmasks
Author(s): Ashwini Sinha; Dennis W. Hess; Clifford L. Henderson
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Novel photodefinable low-k dielectric polymers based on polybenzoxazines
Author(s): Michael Romeo; Kazuhiro Yamanaka; Kazuhiko Maeda; Clifford L. Henderson
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Patterning of biomolecules on a biocompatible nonchemically amplified resist
Author(s): Jin-Baek Kim; Ramakrishnan Ganesan; So Young Yoo; Jae-Hak Choi; Sang Yup Lee
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Resist evaluation for EUV application at ASET
Author(s): Doohoon Goo; Yuusuke Tanaka; Yukiko Kikuchi; Hiroaki Oizumi; Iwao Nishiyama
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Molecular glass photoresists containing photoacid generator functionality: a route to a single-molecule photoresist
Author(s): Richard A. Lawson; Cheng-Tsung Lee; Robert Whetsell; Wang Yueh; Jeanette Roberts; Laren Tolbert; Clifford L. Henderson
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The resist materials study for the outgassing reduction and LWR improvement in EUV lithography
Author(s): Seiya Masuda; Sou Kamimura; Shuuji Hirano; Wataru Hoshino; Kazuyoshi Mizutani
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An analysis of EUV-resist outgassing measurements
Author(s): Kim R. Dean; Iwao Nishiyama; Hiroaki Oizumi; Anthony Keen; Heidi Cao; Wang Yueh; Takeo Watanabe; Paolo Lacovig; Luca Rumiz; Gregory Denbeaux; Julia Simon
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Contact angles and structure/surface property relationships of immersion materials
Author(s): Linda K. Sundberg; Daniel P. Sanders; Ratnam Sooriyakumaran; Phillip J. Brock; Robert D. Allen
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Mechanism of immersion specific defects with high receding-angle topcoat
Author(s): Mamoru Terai; Teruhiko Kumada; Takeo Ishibashi; Takuya Hagiwara; Tetsuro Hanawa; Tomoyuki Ando; Takeshi Matsunobe; Kazuyuki Okada; Yuichi Muraji; Kazuhiro Yoshikawa; Naoki Man
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Defectivity reduction studies for ArF immersion lithography
Author(s): Kentaro Matsunaga; Takehiro Kondoh; Hirokazu Kato; Yuuji Kobayashi; Kei Hayasaki; Shinichi Ito; Akira Yoshida; Satoru Shimura; Tetsu Kawasaki; Hideharu Kyoda
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Study on the reduction of defects in immersion lithography
Author(s): Keundo Ban; Sarohan Park; Cheolkyu Bok; Heeyoul Lim; Junggun Heo; Hyunsook Chun; Junghyun Kang; Seungchan Moon
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Modified polymer architecture for immersion lithography
Author(s): Sang Soo Kim; Jeong Woo Kim; Jung Youl Lee; Seung Keun Oh; Sang Hyang Lee; Jung Woo Kim; Jae Woo Lee; Deog bae Kim; Jaehyun Kim; Keun Do Ban; Cheol Kyu Bok; Seoung-Chan Moon
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Tailoring surface properties of ArF resists thin films with functionally graded materials (FGM)
Author(s): Ichiki Takemoto; Nobuo Ando; Kunishige Edamatsu; Yusuke Fuji; Koji Kuwana; Kazuhiko Hashimoto; Junji Funase; Hiroyuki Yokoyama
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Development of top coat materials for ArF immersion lithography
Author(s): Yoko Takebe; Naoko Shirota; Takashi Sasaki; Osamu Yokokoji
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Transfer mechanism of defects on topcoat to resist pattern in immersion lithography process and effects on etching process
Author(s): Nobuhiro Takahashi; Satoru Shimura; Tetsu Kawasaki
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Models for predicting the index of refraction of compounds at 193 and 589 nm
Author(s): Robert L. Brainard; Seth Kruger; Eric Block
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Outlook for potential third-generation immersion fluids
Author(s): Juan López-Gejo; Joy T. Kunjappu; J. Zhou; B. W. Smith; Paul Zimmerman; Will Conley; Nicholas J. Turro
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Behavior and effects of water penetration in 193-nm immersion lithography process materials
Author(s): Takafumi Niwa; Steven Scheer; Mike Carcasi; Masashi Enomoto; Tadatoshi Tomita; Kouichi Hontake; Hideharu Kyoda; Junichi Kitano
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Process optimization for developer soluble immersion topcoat material
Author(s): Hiroki Nakagawa; Kentarou Goto; Motoyuki Shima; Junichi Takahashi; Tsutomu Shimokawa; Katsunori Ichino; Naohiko Nagatani; Hideharu Kyoda; Kosuke Yoshihara
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Defect transfer from immersion exposure process to post processing and defect reduction using novel immersion track system
Author(s): Osamu Miyahara; Takeshi Shimoaoki; Shinya Wakamizu; Junichi Kitano; Yoshiharu Ono; Shinroku Maejima; Tetsuro Hanawa; Kazuyuki Suko
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Polymer structure modifications for immersion leaching control
Author(s): Sang Hyang Lee; Jung Woo Kim; Jeong Woo Kim; Seung Keun Oh; Chan Sik Park; Jung Youl Lee; Sang Soo Kim; Jae Woo Lee; Deogbae Kim; Jaehyun Kim; Keun Do Ban; Cheol Kyu Bok; Seung Chan Moon
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A multi-tiered approach to 193nm immersion defect reduction through track process adjustments
Author(s): Eugenia Ng; Joshua Hooge
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Formulated surface conditioners in 50-nm immersion lithography: simultaneously reducing pattern collapse and line-width roughness
Author(s): Minoru Sugiyama; Masakazu Sanada; Suping Wang; Patrick Wong; Stephan Sinkwitz; Manuel Jaramillo Jr.; Gene Parris
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BARC (bottom anti-reflective coating) for immersion process
Author(s): Yoshiomi Hiroi; Takahiro Kishioka; Rikimaru Sakamoto; Daisuke Maruyama; Takuya Ohashi; Tomohisa Ishida; Shigeo Kimura; Yasushi Sakaida; Hisayuki Watanabe
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Organic ArF bottom anti-reflective coatings for immersion lithography
Author(s): Zhong Xiang; Hong Zhuang; Hengpeng Wu; Jianhui Shan; Dave Abdallah; Jian Yin; Salem Mullen; Huirong Yao; Eleazar Gonzalez; Mark Neisser
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Multilayer BARCs for hyper-NA immersion lithography process
Author(s): Yasushi Sakaida; Makoto Nakajima; Shigeo Kimura; Takahiro Sakaguchi; Keisuke Hashimoto; Hikaru Imamura
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Initial process evaluation for next generation immersion technology node
Author(s): Tadatoshi Tomita; Kathleen Nafus; Shinichi Hatakeyama; Hitoshi Kosugi; Masashi Enomoto; Shin Inoue; Kirsten Ruck; Heiko Weichert; Mireia Blanco Mantecon; Raf Stegen; Casper de Groot; Richard Moerman
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Novel polymeric anionic photo-acid generators (PAGs) and photoresists for sub-100-nm patterning by 193-nm lithography
Author(s): Mingxing Wang; Nathan D. Jarnagin; Wang Yueh; Jeanette M. Roberts; Melina Tapia-Tapia; Nikola Batina; Kenneth E. Gonsalves
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Development of nanocomposite resists with high plasma etch resistance
Author(s): Chunwei Chen; Hong Zhuang; Ping-Hung Lu; Mark Neisser; Georg Pawlowski
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Chemical composition distribution analysis of photoresist copolymers and influence on ArF lithographic performance
Author(s): Hikaru Momose; Atsushi Yasuda; Akifumi Ueda; Takayuki Iseki; Koichi Ute; Takashi Nishimura; Ryo Nakagawa; Tatsuki Kitayama
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Single component chemically-amplified resist based on dehalogenation of polymer
Author(s): Hiroki Yamamoto; Takahiro Kozawa; Seiichi Tagawa; Katsumi Ohmori; Mitsuru Sato; Hiroji Komano
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Novel 193-nm positive photoresist composed of ester acetal polymer without phenyl group
Author(s): Liyuan Wang; Xiaoxiao Zhai; Yongen Huo
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Two-component photoresists based on acidolytic cleavage of novel ester acetal polymer
Author(s): Liyuan Wang; Zhanxing Chu; Long Cheng
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Nonchemically amplified resists for deep-UV lithography
Author(s): Ramakrishnan Ganesan; Sumin Kim; Seul Ki Youn; Youngook Cho; Jei-Moon Yun; Jin-Baek Kim
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Non-ionic photoacid generators for chemically amplified resists: evaluation results on the application-relevant properties
Author(s): Toshikage Asakura; Hitoshi Yamato; Yuichi Nishimae; Masaki Ohwa
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PAG distribution and acid thermal diffusion study in ultra-thick chemically amplified resist films
Author(s): Medhat Toukhy; Margareta Paunescu; Chunwei Chen; Georg Pawlowski
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Study of 193nm resist degradation under various etch chemistries
Author(s): Arnaud Bazin; Michael May; Erwine Pargon; Benedicte Mortini; Olivier Joubert
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Development of high-performance multi-layer resist process with hardening treatment
Author(s): Yoshiharu Ono; Takeo Ishibashi; Atsumi Yamaguchi; Tetsuro Hanawa; Masahiro Tadokoro; Kazunori Yoshikawa; Kazumasa Yonekura; Keiko Matsuda; Takeshi Matsunobe; Yasushi Fujii; Takeshi Tanaka
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Correlation between etching and optical properties of organic films for multilayer resist
Author(s): E. Soda; F. Koba; S. Kondo; S. Ogawa; S. Saito
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Rework/stripping of multilayer materials for FEOL and BEOL integration using single wafer tool techniques
Author(s): Stephen Turner
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Spin-on Organic Hardmask Materials in 70nm Devices
Author(s): Chang-Il Oh; Dong-Seon Uh; Do-Hyeon Kim; Jin-Kuk Lee; Hui-Chan Yun; Irina Nam; Min-Soo Kim; Kyong-Ho Yoon; Kyung-Hee Hyung; Nataliya Tokareva; Hwan-Sung Cheon; Jong-Seob Kim; Tu-Won Chang
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Materials for and performance of multilayer lithography schemes
Author(s): Marc Weimer; Yubao Wang; Charles J. Neef; James Claypool; Kevin Edwards; Zhimin Zu
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Advanced developer-soluble gap-fill materials and applications
Author(s): Runhui Huang; Dan Sullivan; Anwei Qin; Shannon Brown
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Novel low-reflective index fluoropolymers-based top anti-reflective coatings (TARC) for 193-nm lithography
Author(s): Tsuneo Yamashita; Takashi Hayami; Takuji Ishikawa; Takashi Kanemura; Hirokazu Aoyama
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Effect of solvents and cross-link reaction group concentration on via filling performance in gap fill materials
Author(s): Satoshi Takei; Yasushi Sakaida; Tetsuya Shinjo
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Optimization of hardmask for dual anti-reflection layers
Author(s): Ju-Hyun Kim; Jeahee Kim; Keeho Kim
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A novel approach to developer-soluble anti-reflective coatings for 248-nm lithography
Author(s): Ramil-Marcelo L. Mercado; Joyce A. Lowes; Carlton A. Washburn; Douglas J. Guerrero
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Optimization of material and process parameter for minimizing defect in implementation of MFHM process
Author(s): Kilyoung Lee; Junggun Heo; Keundo Ban; Hyungsuk Seo; Geunsu Lee; Wonkyu Kim; Junhee Cho; Junhyeub Sun; Sungkwon Lee; Cheolkyu Bok; Seungchan Moon; Jinwoong Kim
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A novel 248-nm wet-developable BARC for trench applications
Author(s): Charles J. Neef; Debra Thomas
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Wet-recess gap-fill materials for an advanced dual damascene process
Author(s): Tetsuya Shinjo; Satoshi Takei; Yusuke Horiguchi; Yasuyuki Nakajima
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Novel approach of UV cross- link process for advanced planarization technology in 32-45 nm lithography
Author(s): Satoshi Takei; Yusuke Horiguchi; Tetsuya Shinjo; Bang-Ching Ho; Yuichi Mano; Yasuyuki Nakajima; Makoto Muramatsu; Mitsuaki Iwashita; Katsuhiro Tsuchiya
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Overcome the challenge of CD-bias with organic bottom anti-reflective coating removal process
Author(s): S. Yanovich; G. Krasnikov; O. Gushchin
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Thin bilayer resists for 193-nm and future photolithography II
Author(s): Yoshi Hishiro; Michael Hyatt
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Radiation sensitive developable bottom anti-reflective coating (DBARC) for 193nm lithography: first generation
Author(s): Medhat Toukhy; Joseph Oberlander; Salem Mullen; PingHung Lu; Mark Neisser
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Post exposure bake unit equipped with wafer-shape compensation technology
Author(s): Shigehiro Goto; Akihiko Morita; Kenichi Oyama; Shimpei Hori; Keiji Matsuchika; Hideyuki Taniguchi
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Reducing bubbles and particles associated with photoresist packaging materials and dispense systems
Author(s): W. B. Alexander; K. T. O'Dougherty; W. Liu; H. Yan; K. Mikkelsen
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Resist evaluation for contact hole patterning with thermal flow process
Author(s): R. Tiron; C. Petitdidier; C. Sourd; D. De Simone; G. Cotti; E. Annoni; B. Mortini
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Effect of novel rinsing material and surfactant treatment on the resist pattern performance
Author(s): Victor Huang; C. C. Chiu; C. A. Lin; Ching Yu Chang; T. S. Gau; Burn J. Lin
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Impact of airborne NH3 and humidity against wafer-to-wafer CD variation in ArF lithography through 45-nm technology node
Author(s): Ryoichiro Naito; Yoshitaka Matsuda; Masaharu Shioguchi; Tsuyoshi Shibata
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Proximity effect correction for the chemical shrink process of different type contact holes
Author(s): Wei Hsien Hsieh; Hung Jen Liu; Wen Bin Wu; Chiang Lin Shin; Jeng Ping Lin
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Mechanism of post develop stain defect and resist surface condition
Author(s): Masahiko Harumoto; Akira Yamaguchi; Akihiro Hisai
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New ArF resist introduction for process through-put enhancement
Author(s): Myoung Soo Kim; Hae-Wook Ryu; Hong-Goo Lee; Hak-Joon Kim; Kew-Chan Shim; Myung-Goon Gil; Hyo-Sang Kang
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A heater plate assisted integrated bake/chill system for photoresist processing
Author(s): Hui-Tong Chua; Arthur Tay; Yuheng Wang; Xiaodong Wu
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Molecular contamination control technologies for high-volume production phase in high-NA 193-nm lithography
Author(s): Toshiro Nakano; Takashi Tanahashi; Akihiro Imai; Kazuki Yamana; Tainen Shimotsu; Nobuhiro Takahashi; Masaharu Shioguchi; Yoshitaka Matsuda; Junichi Kitano
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Printing of structures less than 0,3 µm by i-line exposure using resists TDMR-AR80 and TDMR–AR95
Author(s): A. Behrendt; T. Dow; K. Stoeflin
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Various factors of the image blur in chemically amplified resist
Author(s): Takanori Kawakami; Tomoki Nagai; Yukio Nishimura; Motoyuki Shima; Shiro Kusumoto; Tsutomu Shimokawa
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Image tone optimization in advanced mask making for DUV lithography
Author(s): Jong-doo Kim; Mun-hoe Do; Seong-ho Jeong; Jea-hee Kim; Keeho Kim
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Automatic viscosity controlled production of photoresist
Author(s): Woo Sok Chang; Christos Monovoukas; Michael Tanaka; Norbert Fronczak
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Photoresist adhesion effect of resist reflow process
Author(s): Joon-Min Park; Ji-Eun Lee; Moon-Seok Kim; Jung-Hun Kim; Jai-Soon Kim; Sung-Muk Lee; Jun-Tack Park; Chul-Kyu Bok; Seung-Chan Moon; Seung-Wook Park; Joo-Yoo Hong; Hye-Keun Oh
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Simulation of the combined effects of polymer size, acid diffusion length, and EUV secondary electron blur on resist line-edge roughness
Author(s): D. Drygiannakis; M. D. Nijkerk; G. P. Patsis; G. Kokkoris; I. Raptis; L. H. A. Leunissen; E. Gogolides
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Distribution control of protecting groups and its effect on LER for EUV molecular resist
Author(s): Daiju Shiono; Hideo Hada; Hiroto Yukawa; Hiroaki Oizumi; Iwao Nishiyama; Kyoko Kojima; Hiroshi Fukuda
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Evaluation of the 3D compositional heterogeneity effect on line-edge-roughness
Author(s): Shuhui Kang; Wen-Li Wu; Vivek M. Prabhu; Bryan D. Vogt; Eric K. Lin; Karen Turnquest
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Observing morphology on surface of poly(methacrylate) in ArF lithography using AFM phase image
Author(s): Shuji Matsunaga; Ichihiro Aratani; Fumihiko Okabe; Masahiko Kitayama
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A study of process extension technologies
Author(s): Sang-Kon Kim
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32-nm pattern collapse modeling with radial distance and rinse speed
Author(s): Jong-Sun Kim; Wook Chang; Seoung-Wook Park; Hye-Keun Oh; Suk-Joo Lee; Sung-Hyuk Kim
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The rational design of polymeric EUV resist materials by QSPR modelling
Author(s): Kevin Jack; Heping Liu; Idriss Blakey; David Hill; Wang Yueh; Heidi Cao; Michael Leeson; Greg Denbeaux; Justin Waterman; Andrew Whittaker
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Some non-resist component contributions to LER and LWR in 193-nm lithography
Author(s): Takanori Kudo; Srinivasan Chakrapani; Guanyang Lin; Clement Anyadiegwu; Charito Antonio; Deepa Parthasarathy; Ralph R. Dammel; Munirathna Padmanaban
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Depth-of-focus (DOF) and line-width roughness (LWR) performance of novel surface conditioner solutions for immersion lithography
Author(s): Bo Jou Lu; Yongfa Huang; H. T. Tseng; Chun Chi Yu; Ling-Jen Meng; Ming-Chi Liao; Michale Legenza
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Effect of photo-acid generator concentration and developer strength on the patterning capabilities of a model EUV photoresist
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A study of EUV resist outgassing characteristics using a novel outgas analysis system
Author(s): Julius Joseph Santillan; Minoru Toriumi; Toshiro Itani
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Sub 10-nm contact holes with aspect ratio over sixty formed by e-beam resist shrinkage techniques
Author(s): Wei-Su Chen; Ming-Jer Kao; Ming-Jinn Tsai
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Study on photochemical analysis system for EUV lithography
Author(s): A. Sekiguchi; Y. Kono; M. Kadoi; Y. Minami; T. Kozawa; S. Tagawa; D. Gustafson; P. Blackborow
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Effect of deprotection activation energy on lithographic performance of EUVL resist
Author(s): Sang-Jeoung Kim; Geun-Jong Yu; Jung-Yeol Lee; Hyun-Jin Kim; Jae-Woo Lee; Deog-Bae Kim; Yool Kang; Jaehyun Kim
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Photoresist dissolution into a CO2 compatible salt and CO2 solution: Investigation of Processing Conditions
Author(s): Amy E. Zweber; Mark Wagner; Ruben G. Carbonell
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Exposure of molecular glass resist by e-beam and EUVIL
Author(s): Cyril Vannuffel; Damien Djian; Serge Tedesco; Dimitra Niakoula; Panagiotis Argitis; Veroniki P. Vidali; Elias Couladouros; Harun Solak
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Sub-10-nm structures written in ultra-thin HSQ resist layers using electron-beam lithography
Author(s): Anda E. Grigorescu; Marco C. van der Krogt; Cees W. Hagen
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Phenolic molecular glasses as resists for next-generation lithography
Author(s): Xavier André; Jin Kyun Lee; Anuja De Silva; Nelson Felix; Christopher K. Ober; Heidi B. Cao; Hai Deng; Hiroto Kudo; Daisuke Watanabe; Tadatomi Nishikubo
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Study on diazonaphthoquinone positive photoresist composition for LCD
Author(s): Fangyu Zhou; Yingquan Zou; Zhanbin Zhang
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The use of a black pigment polyimide, DARC300, as a light absorber on an optical sensor
Author(s): K. A. Gehoski; P. M. Holm; K. A. Boggess; C. J. Scott
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