This PDF file contains the front matter associated with SPIE Proceedings Volume 10248, including the Title Page, Copyright information, Table of Contents, Introduction (if any), and Conference Committee listing.

The "internet of everything" envisions trillions of connected objects loaded with high-bandwidth sensors requiring massive amounts of local signal processing, fusion, pattern extraction and classification. From the computational viewpoint, the challenge is formidable and can be addressed only by pushing computing fabrics toward massive parallelism and brain-like energy efficiency levels. CMOS technology can still take us a long way toward this goal, but technology scaling is losing steam. Energy efficiency improvement will increasingly hinge on architecture, circuits, design techniques such as heterogeneous 3D integration, mixed-signal preprocessing, event-based approximate computing and non-Von-Neumann architectures for scalable acceleration.

The synthesis of complex nanostructures that combine materials and dimensionality, promises the ability to identify novel designs and architectures with enhanced properties that could be used in new devices. One of the building blocks in nanomaterials are nanowires, which offer several possibilities to get complex nanostructures. We present two kinds of morphologies based on oxide nanowires obtained by a thermal evaporation method. The common feature of both morphologies is a central oxide nanowire and, depending on the growth parameters, nanowires with either nanocrystallites or nano/microrods attached to the central wire are obtained. We have previously reported the fabrication of several single oxide nanowires and in particular, gallium oxide (β-Ga₂O₃) and zinc germanate oxide (Zn₂GeO₄) nanowires. Here we report the shape evolution of these nanowires by the suitable modification of the growth parameters. The addition of tin oxide (SnO₂) to the precursors and variation of the thermal treatments duration result in the formation of the above-mentioned complex nanostructures. Structural and chemical characterizations were performed by electron microscopy techniques and Raman spectroscopy. The results shed light on the understanding of the driving mechanisms that lead to the formation of complex oxide nanostructures.

An improved nanoscale processing technique by using polystyrene (PS) nanoparticles as a mask is successfully implemented to produce vertically aligned silicon nanowire (SiNW) arrays. Lithographic microstructures with different shapes and opening sizes were applied to determine the fabrication area followed by deposition of a PSS/PDDA/PSS layer. Therefore, most of the substrate areas were covered and a large-range order of PS nanoparticles can be acquired by detailed investigation of spin-coating parameters and surface properties. Afterwards, the particle size was modulated resulting in feature diameters ranging from 459 ± 9 nm down to 248 ± 11 nm. Using this as a mask for inductively coupled plasma (ICP) cryogenic dry etching, a feature-size variation of high-density SiNWs from 225 ± 18 nm to 146 ± 7 nm can be achieved. Finally, a method with simple patterning steps has been developed and tested on more than 100 samples emerging as an alternative method for reliable nanostructure realization.

The recent flame based growth strategy offers a simple and versatile fabrication of various (one, two, and three-dimensional) nano- and microstructures from different metal oxides (ZnO, SnO2, Fe2O3, etc.) in a desired manner.[1] ZnO structures ranging from nanoscales wires to macroscopic and highly porous 3D interconnected tetrapod networks have been successfully synthesized, characterized and utilized for various applications. The ZnO micro- and nanoneedles grown at walls in silicon trenches showed excellent whispering gallery mode resonances and photocatalytic properties.[2] Using the same strategy, large polycrystalline micro- and nanostructured ZnO platelets can be grown with grains interconnected together via grain boundaries and these grain boundaries exhibit a higher conductivity as compared to individual grains.[3] This flame transport synthesis (FTS) approach offers the growth of a large amount of ZnO tetrapods which have shown interesting applications because of their 3D spatial shape and micro-and nanoscale size, for example, interconnected tetrapods based devices for UV-detection and gas sensing.[4-5] Because of their complex 3D shape, ZnO tetrapods can be used as efficient filler particles for designing self-reporting,[6] and other interesting composites. The nanostructured materials exhibit an important role with respect to advanced biomedical applications as grown ZnO structures have shown strong potentials for antiviral applications.[7] Being mechanically strong and micro-and nanoscale in dimensions, these ZnO tetrapods can be easily doped with other elements or hybridized with various nanoparticles in form of hybrid ZnO tetrapods which are suitable for various multifunctional applications, for example, these hybrid tetrapods showed improved gas sensing properties.[8] The sacrificial nature of ZnO allows the for growth of new tetrapods and 3D network materials for various advanced applications, for example, highly porous and ultra light carbon based Aerographite materials[9] and hollow silicon tetrapods.[10] These carbon based highly porous network can be further utilized for growth of new hybrid 3D nanomaterials, for example, Aerographite- GaN[11] and Aerographite-ZnO[12] for advanced optical and other applications.

We proposed a new type of the methanol concentration sensor that may be integrated directly to the GaP nanostructured photocathode. Necessary attribute for this design is the possibility to make it compatible with p-type of semiconductor. This condition follows from the fact that photocathodes for the CO₂ splitting are exclusively prepared from p-type of semiconductors. Design of methanol sensor emanates from this principle. On the GaP substrate is deposited thin Pt supporting layer (100-200 nm thick).This layer is covered by 500 nm thick Nafion membrane that serves as proton filter. On the top of Nafion layer is deposited top Pt contact layer covered by thin nanostructured Pt layer layer with various thickness (0.5 -5 nm). This nanostructured Pt is formed into small islands. It serves as an absorption layer for methanol. Sensor detection properties were estimated from monitoring of I-V characteristics. They were measured in dark and under various methanol concentrations. Dark current values are in order 10^-9 A, and this current increases up to order of microamps for methanol of concentration more than 95%.These measurements proved high sensitivity of the GaP compatible sensor structure. Methanol sensors were realized in form of narrow stripe on the side of the photocathode.

Nanosensors systems comprised of an array of parallel-connected single-nanowires across electrodes with finger-widths, closely related to the diameter of gas sensitive WO₃ nanowire are developed. The processing steps for the fabrication of these systems include electron-beam lithography, direct writing laser lithography, metallization, etching, dielectrophoresis, and aerosol assisted chemical vapour deposition, among others. The functionality of these systems in resistive configuration towards ethanol and nitrogen dioxide is evaluated. Results indicate higher sensor responses at 250°C and less signal to noise by applying constant currents of 50 nA. For these conditions, the sensor systems demonstrate reproducible responses to each analyte, with higher response to low concentrations of nitrogen dioxide (0.2, 1, 2.5 ppm), as opposed to ethanol (2.5, 10, 100 ppm), and in line with the literature.

We report on the fabrication and the emission characterization of single ring-shaped Si ridges with a coating of diamond-like carbon (DLC). The reactive ion etching and the subsequent inductively coupled plasma step were adjusted to realize ring-shaped Si ridges with a height of 7.5 μm respectively 15 μm and an apex radius of 20 – 25 nm. The samples were coated with a DLC layer (thickness ≈ 2 – 5 nm) by a filtered cathodic vacuum arc deposition system in order to lower the work function of the emitter and to improve the field emission characteristics. The field emission characterizations were done in diode configuration with cathode and anode separated by a 50 μm thick mica spacer. A higher emission current was carried out for the ring-shaped Si ridge in comparison to the point-shaped Si tips due to the increased emission area. The highest emission current of 0.22 μA at 1000 V was measured on a DLC-coated sample with the highest aspect ratio. No degradation of the emission current was observed in the plateau regime during a measurement period of 6 h. Finally, no decreasing performance of the field emission properties was found due to changes in the geometry or destructions.

Investigating long-term fatal corrosion of turquoise lead-potassium historic glass beads, we have detected micro and nano crystallites of orthorhombic KSbOSiO₄ (KSS) in glass. We have come to conclusion that KSS precipitates and their clusters give rise to internal glass corrosion. K and Sb being glass dopants form KSS crystallites during glass melt cooling; tensile strain arising in the glass matrix during cooling gives rise to glass cracking and eventually to its rupture and formation of heterogeneous grains. The strain-induced diffusion of impurities, resembling internal gettering in the Si technology, explains changes in glass color. We have also detected Pb₂Fe_0.5Sb_1.5O_6.5 nano crystallites in stable yellow lead glass beads. The number density and the sizes of these crystallites are much less than those of the KSS crystallites in turquoise lead-potassium glass, they do not form large clusters; internal cracks also has not been observed in this glass. This may explain the stability of yellow lead glass. The study may be useful for predicting long-term stability of technical glasses as well as for synthesis of nano-KSS/glass composites.

NFFA-EUROPE is an European open access resource for experimental and theoretical nanoscience and sets out a platform to carry out comprehensive projects for multidisciplinary research at the nanoscale extending from synthesis to nanocharacterization to theory and numerical simulation. Advanced infrastructures specialized on growth, nano-lithography, nano-characterization, theory and simulation and fine-analysis with Synchrotron, FEL and Neutron radiation sources are integrated in a multi-site combination to develop frontier research on methods for reproducible nanoscience research and to enable European and international researchers from diverse disciplines to carry out advanced proposals impacting science and innovation. NFFA-EUROPE will enable coordinated access to infrastructures on different aspects of nanoscience research that is not currently available at single specialized ones and without duplicating their specific scopes. Approved user projects will have access to the best suited instruments and support competences for performing the research, including access to analytical large scale facilities, theory and simulation and high-performance computing facilities. Access is offered free of charge to European users and users will receive a financial contribution for their travel, accommodation and subsistence costs. The users access will include several “installations” and will be coordinated through a single entry point portal that will activate an advanced user-infrastructure dialogue to build up a personalized access programme with an increasing return on science and innovation production. The own research activity of NFFA-EUROPE will address key bottlenecks of nanoscience research: nanostructure traceability, protocol reproducibility, in-operando nano-manipulation and analysis, open data.

The hybrid (organo-inorganic) lead-halide perovskites revolutionized the field of solar cell research due to the impressive power conversion efficiencies of up to 21% recently reported in perovskite based solar cells. This talk will present first the general concepts of excitonic photovoltaics, as compared to conventional Si-type solar cells, asking a question: is hybrid perovskite PV an excitonic solar cell or not? Do we need excitons dissociation at D-A interfaces or CNT charge collectors? Then I will show our recent experimental results on the fast spectroscopy of excitons, magnetic field effect on generation of correlated (e-h) pairs. Also will discuss our Hall effect results, that allows to evaluate intrinsic charge carrier transport and direct measurements of mobility in these materials performed for the first time in steady-state dc transport regime. From these measurements, we have obtained the electron-hole recombination coefficient, the carrier diffusion length and lifetime. Our main results include the intrinsic Hall carrier mobility reaching up to 60 cm2V-1s^-1 in perovskite single crystals, carrier lifetimes of up to 3 ms (surprisingly too long!), and carrier diffusion lengths as long as 650 μm (huge if compared to organic and even best inorganic materials). Our results also demonstrate that photocarrier recombination in these disordered solution-processed perovskites is as weak as in the best (high-purity single crystals) of conventional direct-band inorganic semiconductors. Moreover, as we show in our experiment, carrier trapping in perovskites is also strongly suppressed, which accounts for such long carrier lifetimes and diffusion lengths, significantly longer than similar parameters in the best inorganic semiconductors, such e.g. as GaAs. All these remarkable transport properties of hybrid perovskites need to be understood from fundamental physics point of view. Looks like we need some new concepts to explain the mysterious properties of “protected” hybrid perovskites. We suggest that some of this unusual properties can be attributed to a special type of “dipole rotational polaron” formed in their lattice due to interactions of charge with methyl-ammonium organic dipoles, each of 2.3 Debye. Examples of perovskite solar cell with transparent CNT charge collectors will demonstrated the 3 D charge collection in the monolithic tandems of perovskite PV with other dissimilar materials PVs, such as OPV and inorganic PV. We describe the pioneering methods to create highly transparent CNT sheets by dry lamination from vertically alligned CVD forests of MWCNTs. Transparency can be further increased by converting CNT aerogels into locally collapsed meshs with micron scale oppenings by spraying Ag nanowires, which lowers sheet resistance to values of Rsh< 40 ohm/sq. such AgNW@CNT transparent sheets are ideal interlayers in three terminal tandems of perovskite PV with polymeric OPV and/or inorganic solar cells. We show that nanoimprinting can further improve the performance of perovskite photodetectors and optoelectronic devices

Nowadays, the conversion efficiency of Cu(In･Ga)Se2 (CIGS)-based solar cell already reached over 20%. CdS thin films prepared by chemical bath deposition (CBD) method are used for CIGS-based thin film solar cells as the buffer layer. Over the past several years, a considerable number of studies have been conducted on ZnS buffer layer prepared by CBD in order to improve in conversion efficiency of CIGS-based solar cells. In addition, application to CIGS-based solar cell of ZnS buffer layer is expected as an eco-friendly solar cell by cadmium-free. However, it was found that ZnS thin films prepared by CBD included ZnO or Zn(OH)2 as different phase [1]. Nakata et. al reported that the conversion efficiency of CIGS-based solar cell using ZnS buffer layer (CBD-ZnS/CIGS) reached over 18% [2]. The problem which we have to consider next is improvement in crystallinity of ZnS thin films prepared by CBD.

In this work, we prepared ZnS thin films on quarts (Si02) and SnO2/glass substrates by CBD with the self-catalysis growth process in order to improve crystallinity and quality of CBD-ZnS thin films.

The solution to use for CBD were prepared by mixture of 0.2M ZnI2 or ZnSO4, 0.6M (NH2)2CS and 8.0M NH3 aq. In the first, we prepared the particles of ZnS on Si02 or SnO2/glass substrates by CBD at 80℃ for 20 min as initial nucleus (1st step ). After that, the particles of ZnS on Si02 or SnO2/glass substrates grew up to be ZnS thin films by CBD method at 80℃ for 40 min again (2nd step). We found that the surface of ZnS thin films by CBD with the self-catalyst growth process was flat and smooth. Consequently, we concluded that the CBD technique with self-catalyst growth process in order to prepare the particles of ZnS as initial nucleus layer was useful for improvement of crystallinity of ZnS thin films on SnO2/glass. [1] J.Vidal et,al., Thin Solid Films 419 (2002) 118. [2] T.Nakata et.al., Jpn. J. Appl. Phys. 41(2B), L165-L167 (2002)

This paper reports a study of two types of silicon based nanostructures prospective for applications in photonics. The first ones are Ge/Si(001) structures forming at room temperature and reconstructing after annealing at 600°C. Germanium, being deposited from a molecular beam at room temperature on the Si(001) surface, forms a thin granular film composed of Ge particles with sizes of a few nanometers. A characteristic feature of these films is that they demonstrate signs of the 2 x 1 structure in their RHEED patterns. After short-term annealing at 600°C under the closed system conditions, the granular films reconstruct to heterostructures consisting of a Ge wetting layer and oval clusters of Ge. A mixed type c(4x2) + p(2x2) reconstruction typical to the low-temperature MBE (T_gr < 600°C) forms on the wetting layer. Long-term annealing of granular films at the same conditions results in formation of c(4x2)-reconstructed wetting layer typical to high-temperature MBE (T_gr < 600°C) and huge clusters of Ge. The other type of the studied nanostructures is based on Pt silicides. This class of materials is one of the friendliest to silicon technology. But as silicide film thickness reaches a few nanometers, low resistivity becomes of primary importance. Pt₃Si has the lowest sheet resistance among the Pt silicides. However, the development of a process of thin Pt3Si films formation is a challenging task. This paper describes formation of a thin Pt₃Si/Pt2Si structures at room temperature on poly-Si films. Special attention is paid upon formation of poly-Si and amorphous Si films on Si₃N₄ substrates at low temperatures.

Calibration and validation of fluorescence microscopy devices and components require a high level of stability and repeatability in their fluorescent properties, both spatially and temporally. In order to establish a dependable reference point, from which all variations within the microscope and peripheral devices can be tested, an exceedingly homogeneous fluorescence response must be provided through a calibration tool. We present material system optimization and microfabrication process development, as well as long-term stability considerations for such a calibration tool. Stringent specifications for film thickness (< 1μm ± 0.1% over 1.5x1.5 mm) and for fluorescence response distribution (within 1%) apply, and should hold for up to 100 hours under continuous white irradiation. Low conversion efficiency demands high pick up efficiency and therefor reduces focal depth by high NA of applied fluorescence microscope lens. High spatial resolutions demands use of high quality lenses that typically show low field curvatures and good chromatic corrections. Therefore, the focal plane is flat and well defined in the z-plane.

Fluorescent, ligand capped core-shell quantum dots (SMQDs) were embedded in diluted PMMA at low concentrations. The formulations were spin-coated on silicon and glass wafers to obtain films with thicknesses under 1 μm and low variations on a 100 mm wafer. Fluorescence properties of the SMQD were preserved in the matrix material, and agglomerations were not detectable in the fluorescence response nor in SEM images. Gradual degradation of the fluorescence response due to film aging was managed through robust packaging solutions.

Nanostructured materials are essential for many recent electronic, magnetic and optical devices. Lithography is the most common step used to fabricate organized and well calibrated nanostructures. However, feature sizes less than 200 nm usually require access to deep ultraviolet photolithography, e-beam lithography or soft lithography (nanoimprinting), which are either expensive, have low-throughput or are sensitive to defects. Low-cost, high-throughput and low-defect-density techniques are therefore of interest for the fabrication of nanostructures. In this study, we investigate the potential of displacement Talbot lithography for the fabrication of specific structures of interest within plasmonic and metamaterial research fields. We demonstrate that nanodash arrays and ‘fishnet’-like structures can be fabricated by using a double exposure of two different linear grating phase masks. Feature sizes can be tuned by varying the exposure doses. Such lithography has been used to fabricate metallic ‘fishnet’-like structures using a lift-off technique. This proof of principle paves the way to a low-cost, high-throughput, defect-free and large-scale technique for the fabrication of structures that could be useful for metamaterial and plasmonic metasurfaces. With the development of deep ultraviolet displacement Talbot lithography, the feature dimensions could be pushed lower and used for the fabrication of optical metamaterials in the visible range.

We report on the development of electrochemical etching technology for the production of multilayer porous structures (MPS) allowing one to fabricate Bragg reflectors on the basis of GaN bulk substrates grown by Hydride Vapor Phase Epitaxy (HVPE). The formation of MPS during anodization is caused by the spatial modulation of the electrical conductivity throughout the surface and the volume of the HVPE-grown GaN substrate, which occurs according to a previously proposed model involving generation of pits and their overgrowth. We found that the topology of the porous sheets constituting the MPS is different in the vicinity of N-face and Ga-face of the bulk wafer, it being of conical shape near the N-face and of hemispherical shape near the Ga-face. The composition of electrolytes, their concentration as well as the anodization potential applied during electrochemical etching are among technological parameters optimized for designing MPS suitable for Bragg reflector applications. It is shown also that regions with various porosities can be produced in depth of the sample by changing the anodization potential during the electrochemical etching.

Irradiation of high resistivity p-like CdTe crystals pre-coated with an In dopant film from the CdTe side by nanosecond laser pulses with wavelength that is not absorbed by the semiconductor made it possible to directly affect the CdTe-In interface because radiation was strongly absorbed by a thin layer of the In film adjoining to the CdTe crystal. The doping mechanism was associated with the action of laser-induced stress wave which was generated under extreme conditions in the confined area at the CdTe-In interface under laser irradiation. The developed technique allowed avoiding evaporation of In dopant and resulted in the formation of the In-doped CdTe region and thus, creation of a built-in p-n junction. The temperature distribution inside the three layer CdTe-In-Water structure was calculated and correlations between the characteristics of the fabricated In/CdTe/Au diodes and laser processing conditions were obtained.

Connecting metals reliable with different corrosion potential is a well-known challenge. An extreme example are copper aluminum contacts. Galvanic corrosion occurs if the two different metals are in contact with each other and an electrolyte, the aluminum becomes susceptible to corrosion under current flow. Usually, antioxidant pastes containing metals are employed but create difficulties e.g. for fatigue resistant power electronic connections.

The recently described process of nanoscale sculpturing [1] offers an alternative. Usually, if the surface of metals like aluminium are prepared they are just arbitrary cuts through the bulk. There is no optimization of the surface grain structure towards stability at all. Neither the crystalline facets in the grains are in their most stable orientation nor is the protective oxide shell the most stable one. The nanoscale sculpturing approach is carving out the most stable grains and planes by chemical or electrochemical treatment. The decisive trick is that the chemistry is targeting towards the instable oxide and not the metal. Aluminium sample surfaces including alloys like AA575 exhibit afterwards single crystalline surface facets covered with nanoscale stable oxide films. Galvanically deposited copper forms extremely reliable interlocked connections on top, even allowing for soldering on top of their surface.

Diatoms (Bacillariophyceae) are the most species-rich group of algae, they are single-celled characterized by a silicified cell wall called a frustule. Diatoms are diverse in shape with many distinct features like raphe and fultoportulae. The diatom cell wall morphology and its hierarchy structure make it a unique unicellular organism for nanotechnology research and applications.

Diatom cells are a promising system for green synthesis of nanomaterials like metallic nanoparticles (NPs), nanostructured polymers and other nanomaterials. The production of NPs is achieved today by using methods like attrition or pyrolysis. The cost and the toxic substances often used in these common methods of NPs synthesis limit their applications. Therefore, NPs biosynthesis by diatom cultures, which can be done at ambient CO₂ concentrations, temperature and pressure, offers a sustainable alternative solution.

In this work, we examined the formation of silver NPs (AgNPs) by the diatom Phaeodactylum tricornutum cultivated at 25°C for a period of 8 days. Using this approach, diatom cultures were either grown throughout the duration of the experiment in an artificial seawater (ASW)-f/2 medium enriched with 1 ppm Ag⁺ or grown in an ASW-f/2 medium where similar silver ion concentrations were added on experimental day 4. We found that 1 ppm Ag⁺ reduces the P. tricornutum growth by up to 50% as compared with the control. Moreover, scanning electron microscopy (SEM) in combination with Energy-Dispersive X-ray (EDX) showed the presence of AgNPs nanoparticles with different sizes and chemical composition associated with the diatom frustules and extracellular polymeric substances.

II-VI compounds are promising materials for the fabrication of room-temperature terahertz devices due to their beneficial properties like as type-I conduction band alignment, high breakdown field strength (~331 kV/cm for ZnSe vs. ~80 kV/cm for GaAs), and higher values of the conduction band offset (1.5 eV for BeSe/ZnSe vs. 0.7 eV for AlAs/GaAs). In this paper we report on numerical study of the resonant tunneling transport in ZnBeSe/ZnSe/ZnBeSe symmetric and asymmetric resonant tunneling diodes (RTDs). The negative differential resistance feature is observed in the current-voltage characteristics of the ZnSe-based RTDs. It is found that the maximum of peak-to-valley ratio (PVR) of the current density is equal to 6.025 and 7.144 at 150 K, and to 1.120 and 1.105 at 300 K for the symmetric and asymmetric RTDs, respectively. The effect of barrier heights on the frequency and output power performance of RTD devices are studied and discussed.

This paper describes the recent results in ultrafast (femtoseconds and picoseconds) pulsed laser patterning of graphene films (single layer graphene, graphene oxide (GO)). We investigated such effects of nonlinear optical interaction like selective laser ablation of graphene, laser reduction of graphene oxide and local functionalization (oxidation) of graphene based on multiphoton absorption for microelectrode patterning. The graphene oxide and reduction was demonstrated under femtosecond laser pulses as well as fine ablation for monolayer GO films under ps laser pulses. We demonstrated the patterned laser reduction over the GO film leads to minimum in resistance for laser fluence because of interplay of chemical and thermal effects in carbon lattice and photons. The micro-scale patterns in graphene on SiO₂ substrates were fabricated using ultrashort 515 nm laser pulses. For both picosecond and femtosecond laser pulses two competitive processes, based on photo-thermal (ablation) and photochemical (oxidation/etching) effects, were observed. The laser-induced etching of graphene starts just below the threshold energy of graphene ablation. The mechanisms of ultrafast laser interaction with graphene are discussed. Patterned graphene was investigated by AFM, microRaman, SEM and sheet resistance measurements and other techniques. The mechanisms of ultrafast laser interaction with graphene are discussed. The comprehensive models of graphene oxidation/reduction are suggested.