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Proceedings Paper

Photomask etch: addressing the resist challenges for advanced phase-shift and binary photomasks
Author(s): Michael Grimbergen; Madhavi Chandrachood; Keven Yu; Toi Yue Becky Leung; Amitabh Sabharwal; Ajay Kumar
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Paper Abstract

As lithography requirements mandate ever-thinner resist thickness, the need for in-situ monitoring has become more urgent. In this paper we present an in-situ optical methodology-based system to determine residual photoresist thickness during advanced photomask etch with < 1000 Å photoresist. Several types of phase-shift masks and photoresists were examined. A series of masks were etched to demonstrate the performance of the system. Results show an average accuracy of better than 2%, with a maximum absolute range of all tests within 8%.

Paper Details

Date Published: 8 November 2012
PDF: 4 pages
Proc. SPIE 8522, Photomask Technology 2012, 85222M (8 November 2012); doi: 10.1117/12.981215
Show Author Affiliations
Michael Grimbergen, Applied Materials, Inc. (United States)
Madhavi Chandrachood, Applied Materials, Inc. (United States)
Keven Yu, Applied Materials, Inc. (United States)
Toi Yue Becky Leung, Applied Materials, Inc. (United States)
Amitabh Sabharwal, Applied Materials, Inc. (United States)
Ajay Kumar, Applied Materials, Inc. (United States)

Published in SPIE Proceedings Vol. 8522:
Photomask Technology 2012
Frank E. Abboud; Thomas B. Faure, Editor(s)

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