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Proceedings Paper

Illuminating EUVL mask defect printability
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Paper Abstract

For the next few years, the EUV Lithography (EUVL) community must learn to find mask defects using non-actinic inspection wavelengths. The non-actinic light cannot always determine the exact nature of the defect; whether it is a particle, pattern, or defect in the multilayer. It also cannot predict which defects will induce phase errors and which will induce amplitude errors on wafer. Correlating the signature of the defect as seen by a non-actinic inspection tool and on wafer resist image will inject essential knowledge into the non-actinic defect classification. This paper will explore the correlation between EUVL mask defect signatures detected (and not detected) at both 193 nm and e-beam inspection wavelengths and waferprintable defects. The defects of interest will be characterized at mask level using atomic force microscopy (AFM) and critical dimension scanning microscopy (CDSEM). Simulations will be deployed to explain the signatures illuminated by both EUVL and 193nm exposures. This work addresses the gap between inspection sensitivity at non-actinic wavelengths and EUVL mask defect printability, and provide generalized understanding of how the two views differ.

Paper Details

Date Published: 8 November 2012
PDF: 15 pages
Proc. SPIE 8522, Photomask Technology 2012, 85220I (8 November 2012); doi: 10.1117/12.977853
Show Author Affiliations
Karen D. Badger, IBM Microelectronics (United States)
Zhengqing John Qi, IBM Microelectronics (United States)
Emily Gallagher, IBM Microelectronics (United States)
Kazunori Seki, Toppan Photomasks, Inc. (United States)
Gregory McIntyre, IBM Microelectronics (United States)

Published in SPIE Proceedings Vol. 8522:
Photomask Technology 2012
Frank E. Abboud; Thomas B. Faure, Editor(s)

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