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Proceedings Paper

Improving CD uniformity using MB-MDP for 14nm node and beyond
Author(s): Byung Gook Kim; Jin Choi; Jisoong Park; Chan Uk Jeon; Sterling Watson; Anthony Adamov; Bob Pack; Ingo Bork
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Paper Abstract

Model-Based Mask Data Preparation (MB-MDP) has been discussed in the literature for its benefits in reducing mask write times [1][2]. By being model based (i.e., simulation based), overlapping shots, per-shot dose modulation, and circular and other character projection shots are enabled. This reduces variable shaped beam (VSB) shot count for complex mask shapes, and particularly ideal ILT shapes [3]. In this paper, the authors discuss another even more important aspect of MB-MDP. MB-MDP enhances CD Uniformity (CDU) on the mask, and therefore on the wafer. Mask CDU is improved for sub-80nm features on mask through the natural increase in dose that overlapping provides, and through per-shot dose modulation. The improvement in CDU is at the cost of some write times for the less complex EUV masks with only rectangular features. But these masks do not have the basis of large write times that come from complex SRAFs. For ArF masks for the critical layers at the 20nm logic node and below, complex SRAFs are unavoidable. For these shapes, MB-MDP enhances CDU while simultaneously reducing write times. Simulated and measured comparison of conventional methodology and MB-MDP methodology are presented.

Paper Details

Date Published: 8 November 2012
PDF: 7 pages
Proc. SPIE 8522, Photomask Technology 2012, 852205 (8 November 2012); doi: 10.1117/12.966327
Show Author Affiliations
Byung Gook Kim, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Jin Choi, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Jisoong Park, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Chan Uk Jeon, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Sterling Watson, D2S, Inc. (United States)
Anthony Adamov, D2S, Inc. (United States)
Bob Pack, D2S, Inc. (United States)
Ingo Bork, D2S, Inc. (United States)

Published in SPIE Proceedings Vol. 8522:
Photomask Technology 2012
Frank E. Abboud; Thomas B. Faure, Editor(s)

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