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Proceedings Paper

Printing results of a proof-of-concept 50keV electron multi-beam mask exposure tool (eMET POC)
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Paper Abstract

Printing results as achieved with a proof-of-concept 50keV electron multi-beam mask exposure tool (eMET POC) within 1cm2 specification write fields on 6” mask blanks are reported. The eMET POC consists of a column with 200x reduction optics. Inserted into the column is a CMOS addressable (max. 12.8 Gbits/s) blanking device, providing 256k (k=1024) programmable beams within 82μm x 82μm beam array fields. Multi-beam exposures are done on 150mm Si monitor wafers and 6” mask blanks moved at constant speed (up to 1.23 mm/s) with a high precision (1nm 1sigma) laser-interferometer controlled stage in stripes of 82 μm width (2μm overlap between adjacent stripes). Detailed evaluation results with respect to resolution, CDU, linearity, distortion control and stability, as well as OPC and ILT exposure capabilities are presented. Exposures on 0.1nm address grid are demonstrated.

Paper Details

Date Published: 8 November 2012
PDF: 8 pages
Proc. SPIE 8522, Photomask Technology 2012, 85221H (8 November 2012); doi: 10.1117/12.964988
Show Author Affiliations
Elmar Platzgummer, IMS Nanofabrication AG (Austria)
Christof Klein, IMS Nanofabrication AG (Austria)
Hans Loeschner, IMS Nanofabrication AG (Austria)

Published in SPIE Proceedings Vol. 8522:
Photomask Technology 2012
Frank E. Abboud; Thomas B. Faure, Editor(s)

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