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Proceedings Paper

An enhanced measure of mask quality using separated models
Author(s): Anthony Adamov; Bob Pack; Kazuyuki Hagiwara; Ingo Bork; Jin Choi; Jissong Park; Byung-Gook Kim
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Paper Abstract

Mask Error Enhancement Factor (MEEF) has been a standard measure of mask quality [1]. One of the key assumptions in the construction of MEEF is that mask CD uniformity is not dependent on the shape of mask feature and can be considered to be a constant for given mask process. This assumption is no longer valid for small (<100nm), curvilinear or diagonal features. In this paper we extend definition of MEEF to be valid for all mask shapes call new metric extended MEEF or eMEEF. We also demonstrate on the example of ILT features that eMEEF increases predictability of mask and wafer CD uniformity sometimes changing overall conclusion about mask/wafer manufacturability.

Paper Details

Date Published: 8 November 2012
PDF: 10 pages
Proc. SPIE 8522, Photomask Technology 2012, 852207 (8 November 2012); doi: 10.1117/12.964379
Show Author Affiliations
Anthony Adamov, D2S, Inc. (United States)
Bob Pack, D2S, Inc. (United States)
Kazuyuki Hagiwara, D2S Japan (Japan)
Ingo Bork, D2S, Inc. (United States)
Jin Choi, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Jissong Park, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Byung-Gook Kim, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)

Published in SPIE Proceedings Vol. 8522:
Photomask Technology 2012
Frank E. Abboud; Thomas B. Faure, Editor(s)

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