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Proceedings Paper

The significance of rigorous electromagnetic field simulation on mask development for 20nm optical lithography technology
Author(s): Fan Jiang; Yunfei Deng; Jongwook Kye; Harry J. Levinson; Paul Ackmann; Byoung Il Choi; Frank Schurack; Martin Sczyrba
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Paper Abstract

For 20 nm technology, rigorous electromagnetic field (EMF) simulation is important to predict correct lithography performance in mask development. Three mask absorbers with different total thickness and materials are used in the paper to explore the impact of thickness. The side wall profiles could also have the potential to change the process variation band (PV Band). By using rigorous EMF simulation to calculate a usual process variation band, the result shows the best focus shift changes through patterns, and leads to a CD impact caused by defocus. A new PV Band setting with side wall angle as a variable is used to show the significant impact.

Paper Details

Date Published: 8 November 2012
PDF: 9 pages
Proc. SPIE 8522, Photomask Technology 2012, 852219 (8 November 2012); doi: 10.1117/12.964292
Show Author Affiliations
Fan Jiang, GLOBALFOUNDRIES Inc. (United States)
Yunfei Deng, GLOBALFOUNDRIES Inc. (United States)
Jongwook Kye, GLOBALFOUNDRIES Inc. (United States)
Harry J. Levinson, GLOBALFOUNDRIES Inc. (United States)
Paul Ackmann, GLOBALFOUNDRIES Inc. (United States)
Byoung Il Choi, GLOBALFOUNDRIES Inc. (Singapore)
Frank Schurack, Advanced Mask Technology Ctr. GmbH Co. KG (Germany)
Martin Sczyrba, Advanced Mask Technology Ctr. GmbH Co. KG (Germany)

Published in SPIE Proceedings Vol. 8522:
Photomask Technology 2012
Frank E. Abboud; Thomas B. Faure, Editor(s)

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