
Proceedings Paper
High-range laser bandwidth tuning for focus drillingFormat | Member Price | Non-Member Price |
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Paper Abstract
193nm ArF immersion microlithography has been used widely in high-volume manufacturing, and it is considered to be
the main solution below 32 nm node until extreme ultraviolet (EUV) lithography becomes ready. Laser systems are now
enlarging its function and capability to meet various applications. In this paper we report a newly developed solution for
focus drilling technique applied to increase the depth of focus (DoF) for patterning contacts, vias and trenches. The laser
light is stabilized at any E95 in the range from 0.3 pm to 2.5 pm, where E95 is defined as the width of the spectral range
that contains 95% of the integrated spectral intensity. The high-range bandwidth is realized by introducing a newly
developed line narrowing module (LNM) in the oscillator resonator. The bandwidth is measured with the on-board
Fabry-Perot etalon and well controlled. This technique is easy upgradable to Gigaphoton latest GT62A-1SxE with the
flexible output power (60W - 90W) and stabilized spectrum (E95=0.3pm). In comparison to another focus drilling
technique where the large DoF is achieved by tilting a wafer stage during scan, the increase of the bandwidth of light
source has much smaller impact on the required performance of the scanner such as productivity, overlay and critical
dimension uniformity (CDU). In the paper we present the data that indicate the increases in DoF with broadening of the
laser spectrum as well as imaging and overlay results obtained at high bandwidth.
Paper Details
Date Published: 22 September 2011
PDF: 10 pages
Proc. SPIE 8167, Optical Design and Engineering IV, 81671X (22 September 2011); doi: 10.1117/12.898556
Published in SPIE Proceedings Vol. 8167:
Optical Design and Engineering IV
Jean-Luc M. Tissot; Laurent Mazuray; Rolf Wartmann; Jeffrey M. Raynor; Andrew Wood, Editor(s)
PDF: 10 pages
Proc. SPIE 8167, Optical Design and Engineering IV, 81671X (22 September 2011); doi: 10.1117/12.898556
Show Author Affiliations
Alena Andryzhyieuskaya, ASML Netherlands B.V. (Netherlands)
John van Keulen, ASML Netherlands B.V. (Netherlands)
Tom van der Hoeff, ASML Netherlands B.V. (Netherlands)
Jeroen J. H. M. Linders, ASML Netherlands B.V. (Netherlands)
Michiel Kupers, ASML Netherlands B.V. (Netherlands)
Pablo Gabolde, ASML Netherlands B.V. (Netherlands)
John van Keulen, ASML Netherlands B.V. (Netherlands)
Tom van der Hoeff, ASML Netherlands B.V. (Netherlands)
Jeroen J. H. M. Linders, ASML Netherlands B.V. (Netherlands)
Michiel Kupers, ASML Netherlands B.V. (Netherlands)
Pablo Gabolde, ASML Netherlands B.V. (Netherlands)
Bart Smits, ASML Netherlands B.V. (Netherlands)
Takahito Kumazaki, Gigaphoton Inc. (Japan)
Satoshi Tanaka, Gigaphoton Inc. (Japan)
Hiroshi Tanaka, Gigaphoton Inc. (Japan)
Junichi Fujimoto, Gigaphoton Inc. (Japan)
Takahito Kumazaki, Gigaphoton Inc. (Japan)
Satoshi Tanaka, Gigaphoton Inc. (Japan)
Hiroshi Tanaka, Gigaphoton Inc. (Japan)
Junichi Fujimoto, Gigaphoton Inc. (Japan)
Published in SPIE Proceedings Vol. 8167:
Optical Design and Engineering IV
Jean-Luc M. Tissot; Laurent Mazuray; Rolf Wartmann; Jeffrey M. Raynor; Andrew Wood, Editor(s)
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