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Proceedings Paper

Semiconductor plasmonic metamaterials for near-infrared and telecommunication wavelength
Author(s): Gururaj V. Naik; Vladimir M. Shalaev; Alexandra Boltasseva
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Paper Abstract

Plasmonic materials have conventionally been gold and silver in optical frequencies. However, these conventional metals in the near-infrared (NIR) and visible spectral ranges suffer from problems such as large losses. With the advent of metamaterials, these metals pose a serious bottle-neck in the performances of metamaterial-based devices not only due to the large losses associated with them in the NIR and visible wavelengths, but also their magnitudes of real permittivity are too large. Both of these problems could be solved by using semiconductors as plasmonic materials. Heavily doped zinc oxide and indium oxide can exhibit losses that are nearly four times smaller than silver at the telecommunication wavelength with small negative real permittivity. In this paper, we present the development of a low loss semiconductor plasmonic material, aluminum doped zinc oxide (AZO).

Paper Details

Date Published: 10 September 2010
PDF: 5 pages
Proc. SPIE 7754, Metamaterials: Fundamentals and Applications III, 77540M (10 September 2010); doi: 10.1117/12.863631
Show Author Affiliations
Gururaj V. Naik, Purdue Univ. (United States)
Vladimir M. Shalaev, Purdue Univ. (United States)
Alexandra Boltasseva, Purdue Univ. (United States)
Technical Univ. of Denmark (Denmark)

Published in SPIE Proceedings Vol. 7754:
Metamaterials: Fundamentals and Applications III
Allan D. Boardman; Nader Engheta; Mikhail A. Noginov; Nikolay I. Zheludev, Editor(s)

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