
Proceedings Paper
Reverse ground-state excited-state transition dynamics in two-section quantum dot semiconductor lasers: mode-locking and state-switchingFormat | Member Price | Non-Member Price |
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Paper Abstract
In this contribution reverse emission state transition of a two-section quantum dot laser at a saturable absorber
bias of zero volt (short circuit) is presented where lasing and mode-locking starts first on the energetically
higher first excited-state (ES) and then, with increasing gain current, additional lasing and mode-locking on the
energetically lower ground-state (GS) takes place. A huge coexistence regime as well as temporal simultaneity of
both GS and ES mode-locking is experimentally confirmed. At the onset of two-state mode-locking shorter pulse
widths are found for the GS as compared to the ES at the same gain current. A considerable shortening of the ES
pulse widths is observed when GS mode-locking starts. These state-resolved emission dynamics are confirmed by
time-domain travelling-wave equation modeling. Finally, by electrically shortening the saturable absorber via an
external variable resistor, a resistor Self-Electro-Optical Devices (SEED) configuration is exploited and tailored
emission state control is achieved.
Paper Details
Date Published: 27 April 2010
PDF: 10 pages
Proc. SPIE 7720, Semiconductor Lasers and Laser Dynamics IV, 772011 (27 April 2010); doi: 10.1117/12.854418
Published in SPIE Proceedings Vol. 7720:
Semiconductor Lasers and Laser Dynamics IV
Krassimir Panajotov; Marc Sciamanna; Angel A. Valle; Rainer Michalzik, Editor(s)
PDF: 10 pages
Proc. SPIE 7720, Semiconductor Lasers and Laser Dynamics IV, 772011 (27 April 2010); doi: 10.1117/12.854418
Show Author Affiliations
Stefan Breuer, Technische Univ. Darmstadt (Germany)
Mattia Rossetti, Politecnico di Torino (Italy)
Wolfgang Elsässer, Technische Univ. Darmstadt (Germany)
Lukas Drzewietzki, Technische Univ. Darmstadt (Germany)
Mattia Rossetti, Politecnico di Torino (Italy)
Wolfgang Elsässer, Technische Univ. Darmstadt (Germany)
Lukas Drzewietzki, Technische Univ. Darmstadt (Germany)
Paolo Bardella, Politecnico di Torino (Italy)
Ivo Montrosset, Politecnico di Torino (Italy)
Michel Krakowski, Alcatel-Thales III-V Lab. (France)
Mark Hopkinson, The Univ. of Sheffield (United Kingdom)
Ivo Montrosset, Politecnico di Torino (Italy)
Michel Krakowski, Alcatel-Thales III-V Lab. (France)
Mark Hopkinson, The Univ. of Sheffield (United Kingdom)
Published in SPIE Proceedings Vol. 7720:
Semiconductor Lasers and Laser Dynamics IV
Krassimir Panajotov; Marc Sciamanna; Angel A. Valle; Rainer Michalzik, Editor(s)
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