
Proceedings Paper
Spatio-temporal dynamics of a multi-section tunable laser with and without optical injectionFormat | Member Price | Non-Member Price |
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Paper Abstract
Optically-injected semiconductor lasers have been investigated for many years. The attention has nowadays shifted
towards multi-section lasers as they provide new kinds of applications. Recently, an improved travelling-wave (TW)
method for simulation of multi-section lasers was presented in which spatio-temporal effects were included. An
automated analysis tool was presented for the simulated data to distinguish between different states of dynamics outside
the locking bandwidth as this was not possible before.
Here, a three-section tunable laser, with and without optical injection, is simulated with the improved TW method and
two new results are found. Firstly, the penetration depth of the optical power inside the DBR section of a solitary three-section
laser strongly depends on its position on the tuning characteristic curve. It is shown that even with a small
variation of the carrier density in the tuning region a large variation of the penetration depth can be observed and, hence,
the optical power emitted out of the grating section changes significantly. Secondly, the dynamics of an optically-injected
tunable laser for middle and high injection strengths are presented and it is demonstrated that the locking
bandwidth becomes symmetric around zero detuning and new regions of higher-order instabilities appear outside the
locking region.
Paper Details
Date Published: 27 April 2010
PDF: 10 pages
Proc. SPIE 7720, Semiconductor Lasers and Laser Dynamics IV, 77200F (27 April 2010); doi: 10.1117/12.854015
Published in SPIE Proceedings Vol. 7720:
Semiconductor Lasers and Laser Dynamics IV
Krassimir Panajotov; Marc Sciamanna; Angel A. Valle; Rainer Michalzik, Editor(s)
PDF: 10 pages
Proc. SPIE 7720, Semiconductor Lasers and Laser Dynamics IV, 77200F (27 April 2010); doi: 10.1117/12.854015
Show Author Affiliations
C. A. Stolz, Univ. of Essex (United Kingdom)
D. Labukhin, Univ. of Essex (United Kingdom)
N. Zakhleniuk, Univ. of Essex (United Kingdom)
D. Labukhin, Univ. of Essex (United Kingdom)
N. Zakhleniuk, Univ. of Essex (United Kingdom)
Published in SPIE Proceedings Vol. 7720:
Semiconductor Lasers and Laser Dynamics IV
Krassimir Panajotov; Marc Sciamanna; Angel A. Valle; Rainer Michalzik, Editor(s)
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