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Proceedings Paper

New tools to enable photomask repair to the 32nm node
Author(s): Tod Robinson; Roy White; Ron Bozak; Ken Roessler; Bernie Arruza; Dennis Hogle; Mike Archuletta; David Lee
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Paper Abstract

The AFM-technology based technique of nanomachining has been well-proven in the area photomask repair since its introduction a decade ago. However, the problems and challenges facing the mask repair operator have changed significantly in this period, and ongoing engineering platform development has reflected these shifts, as well as refinements based on specialized experience with nanomachining repair technology. Improvements from this technical development include improved monitoring and control of the internal tool environment (to minimize AFM scan noise and thermal drift), and automation to easily and reliably clean and characterize the 3-dimensional shape of the NanoBitTM apex. For repair applications, improvements will be shown for the automated and operator-intuitive reconstruction of 3-dimensional nanometer-scale patterns on the photomask with referenced z-depth and xy alignment regardless of pattern orthogonality. Multiple pattern repair capability is also reviewed due to a greater diversity of available process options and multi-repair box capability with a common quartz-level z-reference point. Finally, it will be shown how all of these individual improvements work together to provide extended repair capability down to the 32 nm technology node.

Paper Details

Date Published: 23 September 2009
PDF: 12 pages
Proc. SPIE 7488, Photomask Technology 2009, 74880F (23 September 2009); doi: 10.1117/12.847238
Show Author Affiliations
Tod Robinson, RAVE LLC (United States)
Roy White, RAVE LLC (United States)
Ron Bozak, RAVE LLC (United States)
Ken Roessler, RAVE LLC (United States)
Bernie Arruza, RAVE LLC (United States)
Dennis Hogle, RAVE LLC (United States)
Mike Archuletta, RAVE LLC (United States)
David Lee, RAVE LLC (United States)

Published in SPIE Proceedings Vol. 7488:
Photomask Technology 2009
Larry S. Zurbrick; M. Warren Montgomery, Editor(s)

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