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Proceedings Paper

Inverse lithography (ILT) mask manufacturability for full-chip device
Author(s): Byung-Gook Kim; Sung Soo Suh; Sang Gyun Woo; HanKu Cho; Guangming Xiao; Dong Hwan Son; Dave Irby; David Kim; Ki-Ho Baik
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Paper Abstract

Inverse Lithography Technology (ILT) is becoming one of the strong candidates for 32nm and below. ILT masks provide significantly better litho performance and need to be enabled for production as one of the leading candidates for low-k1 lithography. By the very nature ILT masks are computed, they could seem to be complicated to manufacture in production. In a prior publication [1], it has been shown at clip level that the Inverse Synthesizer (ISTM) product has the capability to adjust for mask complexity to make it more manufacturable while maintaining the significant litho gains of nearly ideal ILT mask. The production readiness of ILT needs to be studied at full chip level with various aspects including mask data fracturing, MRC constraints, writing time, and inspection. The computation of ILT mask usually starts with the calculation of an optimized contoured mask then followed by manhattanization step to convert contour into horizontal-vertical segments. By varying the segmentation length during manhattanization, it can affectively change the mask complexity while maintains the shape of mask. The result of segmentation length impact on writing time and lithography performance at full-chip is presented. MRC is another important factor in mask manufacturability which needs to be carefully studied. Mask pattern transfer fidelity and inspectability at various selected MRC rules are also presented in the paper.

Paper Details

Date Published: 30 September 2009
PDF: 8 pages
Proc. SPIE 7488, Photomask Technology 2009, 748812 (30 September 2009); doi: 10.1117/12.833572
Show Author Affiliations
Byung-Gook Kim, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Sung Soo Suh, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Sang Gyun Woo, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
HanKu Cho, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Guangming Xiao, Luminescent Technologies, Inc. (United States)
Dong Hwan Son, Luminescent Technologies, Inc. (United States)
Dave Irby, Luminescent Technologies, Inc. (United States)
David Kim, Luminescent Technologies, Inc. (United States)
Ki-Ho Baik, Luminescent Technologies, Inc. (United States)

Published in SPIE Proceedings Vol. 7488:
Photomask Technology 2009
Larry S. Zurbrick; M. Warren Montgomery, Editor(s)

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