
Proceedings Paper
High-resolution e-beam repair for nanoimprint templatesFormat | Member Price | Non-Member Price |
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Paper Abstract
UV nanoimprint lithography (UV-NIL) is a high-throughput and cost-effective patterning technique for complex nanoscale
features and is considered a candidate for CMOS manufacturing at the 22nm node and beyond. To achieve this
target a complete template fabrication infrastructure including inspection and repair is needed. Due to the 1X
magnification factor of imprint lithography the requirements for these steps are more challenging compared to those for
4X photomasks. E-beam repair is a very promising repair technology for high-resolution imprint templates. It combines
the advantages of precise beam placement using fine resolution images and damage free repair by electron beam induced
chemical reactions. In this work we performed template repair using a new test stand with improved beam and stage
stability. Repeatability of 3D pattern reconstruction with main focus on shrunk lateral repair dimensions and height
control was investigated. The evaluation was done on various features in a 40nm half pitch design. Additionally, the
resolution capability of the new hardware was examined on selected programmed defects in a 32nm half pitch design. A
first qualitative examination of the repaired template was done using top-view SEM images taken from the test stand
before and after repair. The repaired template was then imprinted on 300mm silicon wafers, and the imprinted repaired
defects were analyzed using a SEM Zeiss Ultra 60.
Paper Details
Date Published: 23 September 2009
PDF: 11 pages
Proc. SPIE 7488, Photomask Technology 2009, 74880V (23 September 2009); doi: 10.1117/12.833030
Published in SPIE Proceedings Vol. 7488:
Photomask Technology 2009
Larry S. Zurbrick; M. Warren Montgomery, Editor(s)
PDF: 11 pages
Proc. SPIE 7488, Photomask Technology 2009, 74880V (23 September 2009); doi: 10.1117/12.833030
Show Author Affiliations
Marcus Pritschow, IMS Chips (Germany)
Harald Dobberstein, Carl Zeiss SMS GmbH (Germany)
Klaus Edinger, Carl Zeiss SMS GmbH (Germany)
Mathias Irmscher, IMS Chips (Germany)
Harald Dobberstein, Carl Zeiss SMS GmbH (Germany)
Klaus Edinger, Carl Zeiss SMS GmbH (Germany)
Mathias Irmscher, IMS Chips (Germany)
Douglas J. Resnick, Molecular Imprints, Inc. (United States)
Kosta Selinidis, Molecular Imprints, Inc. (United States)
Ecron Thompson, Molecular Imprints, Inc. (United States)
Markus Waiblinger, Carl Zeiss SMS GmbH (Germany)
Kosta Selinidis, Molecular Imprints, Inc. (United States)
Ecron Thompson, Molecular Imprints, Inc. (United States)
Markus Waiblinger, Carl Zeiss SMS GmbH (Germany)
Published in SPIE Proceedings Vol. 7488:
Photomask Technology 2009
Larry S. Zurbrick; M. Warren Montgomery, Editor(s)
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