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Proceedings Paper

Thin absorber EUVL mask with light-shield border for full-field scanner: flatness and image placement change through mask process
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Paper Abstract

When thinner absorber mask is practically applied to the EUVL for the ULSI chip production, it is inevitable to introduce EUV light shield area in order to suppress leakage of the EUV light from adjacent exposure shots. We believe that light-shield border of multilayer etching type is promising structure in terms of mask process flexibility for higher mask CD accuracy In this paper, we evaluate etching impact of absorber and multilayer on mask flatness and image placement change through mask process of thin absorber mask with light-shield border of multilayer etching type structure. And then, we clarify the relation between mask flatness and mask image placement shift.

Paper Details

Date Published: 29 September 2009
PDF: 11 pages
Proc. SPIE 7488, Photomask Technology 2009, 748818 (29 September 2009); doi: 10.1117/12.829873
Show Author Affiliations
Takashi Kamo, Semiconductor Leading Edge Technologies, Inc. (Japan)
Yuusuke Tanaka, Semiconductor Leading Edge Technologies, Inc. (Japan)
Toshihiko Tanaka, Semiconductor Leading Edge Technologies, Inc. (Japan)
Osamu Suga, Semiconductor Leading Edge Technologies, Inc. (Japan)
Tsukasa Abe, Dai Nippon Printing Co. Ltd. (Japan)
Tadahiko Takikawa, Dai Nippon Printing Co. Ltd. (Japan)
Hiroshi Mohri, Dai Nippon Printing Co. Ltd. (Japan)
Tsutomu Shoki, HOYA Corp. (Japan)
Youichi Usui, HOYA Corp. (Japan)


Published in SPIE Proceedings Vol. 7488:
Photomask Technology 2009
Larry S. Zurbrick; M. Warren Montgomery, Editor(s)

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