Share Email Print

Proceedings Paper

Simulated and measured performance of HgCdTe focal plane arrays
Author(s): Galina V. Chekanova; Albina A. Drugova; Viacheslav Kholodnov; Mikhail S. Nikitin
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

Ways to improve performance of scanning and starring types photovoltaic (PV) infrared (IR) Hg1-xCdxTe focal plane arrays (FPA) including Hg1-xCdxTe Long-Wave (LWIR) PV FPA covering spectral range from 8 to 12 μm requires comprehensive estimation of photodiode's (PD) performance depending on Hg1-xCdxTe material properties and operating conditions and comparing it to real data published for commercial products. Advanced Infrared Focal Plane Arrays including extended Long-Wave (LWIR) 8-14 μm operating at temperatures Top=80-100 K can be developed with due accounting of correlation between measured and correctly calculated performance. Optimized PD with n+-p junction is characterized by lower dark current value than previously reported in same kind n+-p junction. Lowest dark current is preferable for proper multiplexing of PD arrays to Silicon Read-out Integrated Circuits (ROICs) and hence to get highest possible performance as well. Comparative analysis of LWIR PD performance at 80 K is needed also to understand ways to improve FPA useful quality. Objective of the present work was to calculate Hg1-xCdxTe LWIR PV FPA (λco equals to 9.5-10.3 μm at Top=80 K) performance variation with doping level, absorber thickness, surface recombination rate and compare it to measured data on arrays with time-and-delay integration (TDI) mode of operation. Commercial LWIR PV FPAs are fabricated as usual on Hg1-xCdxTe layers grown by Liquid Phase Epitaxy (LPE).

Paper Details

Date Published: 2 October 2008
PDF: 7 pages
Proc. SPIE 7113, Electro-Optical and Infrared Systems: Technology and Applications V, 71131H (2 October 2008); doi: 10.1117/12.800452
Show Author Affiliations
Galina V. Chekanova, Federal State Unitary Enterprise ALPHA (Russia)
Albina A. Drugova, Institute of Radio Engineering and Electronics (Russia)
Viacheslav Kholodnov, Institute of Radio Engineering and Electronics (Russia)
Mikhail S. Nikitin, Federal State Unitary Enterprise ALPHA (Russia)

Published in SPIE Proceedings Vol. 7113:
Electro-Optical and Infrared Systems: Technology and Applications V
David A. Huckridge; Reinhard R. Ebert, Editor(s)

© SPIE. Terms of Use
Back to Top
Sign in to read the full article
Create a free SPIE account to get access to
premium articles and original research
Forgot your username?