Self-trapping of optical beams in photorefractive (PR) materials at telecommunications wavelengths has been studied at steady state in insulators such as SBN [1] and in semiconductor InP:Fe [2], CdTe [3]. PR self-focusing and soliton interactions in semiconductors find interesting applications in optical communications such as optical routing and interconnections because of several advantages over insulators: their sensitivity to near-infrared wavelengths and shorter response time. Photorefractive self focusing in InP:Fe is characterized as a function of beam intensity and temperature. Transient self focusing is found to occur on two time scales for input intensities of tens of W/cm² (one on the order of tens of μs, one on the order of milliseconds). A theory developed describes the photorefractive self focusing in InP:Fe and confirmed by steady state and transient regime measurements. PR associated phenomena (bending and self focusing) are taking place in InP:Fe as fast as a μs for intensities on the order of 10W/cm² at 1.06 μm. Currently we are conducting more experiments in order to estimate the self focusing response time at 1.55μm, to clarify the temporal dynamic of the self focusing and to build up a demonstrator of fast optical routing by photorefractive spatial solitons interactions.

Date Published: 8 May 2008
PDF: 8 pages
Proc. SPIE 6994, Photon Management III, 699409 (8 May 2008); doi: 10.1117/12.780032

Published in SPIE Proceedings Vol. 6994:
Photon Management III
John T. Sheridan; Frank Wyrowski, Editor(s)