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Proceedings Paper

Ge nanostructures doped silica-on-silicon waveguides
Author(s): Haiyan Ou; Troels Peter Rørdam; Karsten Rottwitt; Flemming Grumsen; Andy Horsewell; Rolf W. Berg; Peixiong Shi; Lionel Cervera Gontard; Rafal E. Dunin-Borkowski
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Paper Abstract

Ge nanostructures embedded in silica matrix are emerging as a promising material for new generation devices due to the unique electric and photonic properties. In this paper, Ge nanoclusters and nanocylinders with Ge shell were successfully formed by the high energy electron irradiation in the PECVD deposited glass. In addition, large area Ge nanoclusters were also created by heat-treatment of PECVD deposited glass film. These nanostructures were characterized in terms of size, composition, distribution and crystalline state by using TEM, HRTEM, EDS, SEM, Raman spectroscopy, and SIMS. Waveguides doped with Ge nanoclusters were fabricated and their absorption has been characterized in a wavelength range from 500nm to 1700nm.

Paper Details

Date Published: 26 November 2007
PDF: 14 pages
Proc. SPIE 6782, Optoelectronic Materials and Devices II, 678204 (26 November 2007); doi: 10.1117/12.754562
Show Author Affiliations
Haiyan Ou, Technical Univ. of Denmark (Denmark)
Troels Peter Rørdam, Technical Univ. of Denmark (Denmark)
Karsten Rottwitt, Technical Univ. of Denmark (Denmark)
Flemming Grumsen, Technical Univ. of Denmark (Denmark)
Andy Horsewell, Technical Univ. of Denmark (Denmark)
Rolf W. Berg, Technical Univ. of Denmark (Denmark)
Peixiong Shi, Technical Univ. of Denmark (Denmark)
Lionel Cervera Gontard, Technical Univ. of Denmark (Denmark)
Rafal E. Dunin-Borkowski, Technical Univ. of Denmark (Denmark)

Published in SPIE Proceedings Vol. 6782:
Optoelectronic Materials and Devices II
Yoshiaki Nakano, Editor(s)

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