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Proceedings Paper

Intersubband photonic devices by group-III nitrides
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Paper Abstract

The characteristics of intersubband transitions in III-nitride quantum wells are promising for detectors and all-optical switches through a high intrinsic speed (~1 THz), and can also provide a high optical saturation power and a desired small negative chirp parameter in electroabsorption modulators. The high LO-phonon energy allows to improve the operating temperature of THz emitters. Recent achievements and prospects for intersubband III-nitride photonic devices, mainly for λ=1.55 μm, are briefly reviewed. Further, means to enhance material quality by achieving crack-free growth of GaN/AlN multiple-quantum-well (MQW) structures, and by employing intersubband transitions in multiple-quantum-disk (MQD) structures incorporated into dislocation free GaN nanocolumns are discussed. We investigate the occurrence of cracks in MBE-grown GaN/AlN MQWs on GaN MOVPE templates with respect to the buffer layer, the number of QWs and the temperature reduction rate after growth. Intersubband absorption in GaN/AlN MQDs in the wavelength range 1.38-1.72 μm is demonstrated in three samples grown on Si(111).

Paper Details

Date Published: 26 November 2007
PDF: 14 pages
Proc. SPIE 6782, Optoelectronic Materials and Devices II, 67821N (26 November 2007); doi: 10.1117/12.754372
Show Author Affiliations
P. Holmström, Royal Institute of Technology (Sweden)
Sophia Univ. (Japan)
X. Y. Liu, Chalmers Univ. of Technology (Sweden)
H. Uchida, Sophia Univ. (Japan)
T. Aggerstam, Royal Institute of Technology (Sweden)
A. Kikuchi, Sophia Univ. (Japan)
K. Kishino, Sophia Univ. (Japan)
S. Lourdudoss, Royal Institute of Technology (Sweden)
T. G. Andersson, Chalmers Univ. of Technology (Sweden)
L. Thylén, Royal Institute of Technology (Sweden)

Published in SPIE Proceedings Vol. 6782:
Optoelectronic Materials and Devices II
Yoshiaki Nakano, Editor(s)

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