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Proceedings Paper

Design of high performance DBR lasers for WDM fiber optic communications
Author(s): H. H. Yee; C. L. Xiao; C K. Liao; H. Y. Tung; H. H. Lu
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Paper Abstract

Four-section sampled-grating DBR (SGDBR) lasers, including two sampled grating DBRs, gain and phase tuning sections, were designed by a InGaAlAs / InP strained multiple quantum well microstructure. The lengths of gain and phase sections are 280 μm and 150 μm, respectively. One SGDBR, accommodating 10 sample periods with a total length of 270 μm, is situated adjacent to the gain, and another SGDBR, containing 11 sample periods with a total length of 330 μm, is to the right of phase section. The estimated threshold current and characteristic temperature, T0 , were 10 mA and 166 °K respectively. High T0 reflects excellent electron confinement of the MQW structure. The optical coupling strength and the cavity-mode spacing of DBR lasers were carefully chosen. With appropriate tuning mechanisms, the tunable SGDBR lasers produced 172 transmission channels, each with side-mode suppression ratios higher than 40 dB. Under 100 mA current driving, the lasers could be operated with a bandwidth of 20 GHz and the channel switching could be completed within 1 nS. Moreover, from the observations on the relative intensity noises as well as on the eye diagram, the lasers do exhibit excellent dynamic characteristics.

Paper Details

Date Published: 19 November 2007
PDF: 11 pages
Proc. SPIE 6782, Optoelectronic Materials and Devices II, 67822S (19 November 2007); doi: 10.1117/12.745567
Show Author Affiliations
H. H. Yee, National Taipei Univ. of Technology (Taiwan)
C. L. Xiao, National Taipei Univ. of Technology (Taiwan)
C K. Liao, National Taipei Univ. of Technology (Taiwan)
H. Y. Tung, National Taipei Univ. of Technology (Taiwan)
H. H. Lu, National Taipei Univ. of Technology (Taiwan)

Published in SPIE Proceedings Vol. 6782:
Optoelectronic Materials and Devices II
Yoshiaki Nakano, Editor(s)

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