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Proceedings Paper

Multiplication characteristics of InP/InGaAs avalanche photodiodes with thick multiplication and charge layers
Author(s): Yanli Zhao
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Paper Abstract

In this report, the multiplication characteristics of InP/InGaAs avalanche photodiode (APD) with thick multiplication and charge layer have been studied theoretically and experimentally, considering the electric field distribution, carrier concentration, and different multiplication layer thickness. We find that ionization in the charge layer is very sensitive to avalanche multiplication (M) and breakdown voltage (Vbr). Partial ionization in the charge layer has been suggested, which gives a good description of experimental results.

Paper Details

Date Published: 19 November 2007
PDF: 9 pages
Proc. SPIE 6782, Optoelectronic Materials and Devices II, 67820I (19 November 2007); doi: 10.1117/12.745506
Show Author Affiliations
Yanli Zhao, Huazhong Univ. of Science and Technology (China)

Published in SPIE Proceedings Vol. 6782:
Optoelectronic Materials and Devices II
Yoshiaki Nakano, Editor(s)

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