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Proceedings Paper

High speed silicon optical switches based on carrier depletion
Author(s): Zhiyong Li; Jinzhong Yu; Shaowu Chen; Qiming Wang
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Paper Abstract

The novel design of a silicon optical switch on the mechanism of a reverse p-n junction is proposed. The figuration of contact regions at slab waveguides and the ion implantation technology for creation of junctions are employed in the new design. The two-layer rib structure is helpful for reduction of optical absorption losses induced by metal and heavily-doped contact. And more, simulation results show that the index modulation efficiency of Mach-Zehnder interferometer enhances as the concentrations of dopants in junctions increase, while the trade-off of absorption loss is less than 3dB/μm. The phase shift reaches about 5×10-4 π/μm at a reverse bias of 10V with the response time of about 0.2ns. The preliminary experimental results are presented. The frequency bandwidth of modulation operation can arrive in the range of GHz. However, heavily-doped contacts have an important effect on pulse response of these switches. While the contact region is not heavily-doped, that means metal electrodes have schottky contacts with p-n junctions, the operation bandwidth of the switch is limited to about 1GHz. For faster response, the heavily-doped contacts must be considered in the design.

Paper Details

Date Published: 21 November 2007
PDF: 9 pages
Proc. SPIE 6781, Passive Components and Fiber-based Devices IV, 67812D (21 November 2007); doi: 10.1117/12.743723
Show Author Affiliations
Zhiyong Li, Institute of Semiconductors (China)
Jinzhong Yu, Institute of Semiconductors (China)
Shaowu Chen, Institute of Semiconductors (China)
Qiming Wang, Institute of Semiconductors (China)

Published in SPIE Proceedings Vol. 6781:
Passive Components and Fiber-based Devices IV
Ming-Jun Li; Jianping Chen; Satoki Kawanishi; Ian H. White, Editor(s)

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