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Proceedings Paper

Multi-quantum-well InGaNAs/GaAs resonant cavity enhanced photodetector with integrated vertical taper structure
Author(s): Yu-feng Xu; Yong-Qing Huang; Hui Huang; Xiao-Min Ren
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Paper Abstract

In this work, we analyzed and demonstrated a multi-quantum-well InGaNAs/GaAs RCE photodetector with a vertical taper absorption cavity operating at 1550nm. The GaAs/AlAs distributed Bragg reflectors and InGaNAs/GaAs quantum wells were grown on GaAs substrate by molecular beam epitaxy. The growth of InGaNAs/GaAs quantum wells maybe solves the problem that the GaAs-based materials can only response to short wavelength. The peak wavelength of the spectral response of our photodetector is at 1558.7nm, and the spectral linewidth is 3 nm.

Paper Details

Date Published: 19 November 2007
PDF: 6 pages
Proc. SPIE 6782, Optoelectronic Materials and Devices II, 678223 (19 November 2007); doi: 10.1117/12.743594
Show Author Affiliations
Yu-feng Xu, Beijing Univ. of Posts and Telecommunications (China)
Yong-Qing Huang, Beijing Univ. of Posts and Telecommunications (China)
Hui Huang, Beijing Univ. of Posts and Telecommunications (China)
Xiao-Min Ren, Beijing Univ. of Posts and Telecommunications (China)

Published in SPIE Proceedings Vol. 6782:
Optoelectronic Materials and Devices II
Yoshiaki Nakano, Editor(s)

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