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Proceedings Paper

Design and fabrication of high-performance InGaAsP/InP electroabsorption modulator
Author(s): Hua Yang; Mee Koy Chin; Desmond C.S. Lim; Jingtao Zhou; Shuhying Lee; Yuanbing Cheng; HongLiang Zhu; Weixi Chen
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Paper Abstract

Electroabsorption modulator has been widely used in modern optical fiber communication system and analog RF link system. In this paper, the design of a high-performance EAM with low coupling loss, high saturation power and high speed was demonstrated, which include the waveguide, active core and electrodes. A novel EAM with large optical cavity (LOC) waveguide structure, intrastep quantum well (IQW) active core and traveling wave electrodes was presented and fabricated successfully. Our results show that the LOC waveguide effectively improved the optical profile of EAM and reduced the coupling loss. The obtained traveling wave EAM achieved 21dBm saturation power and 23GHz 3-dB bandwidth.

Paper Details

Date Published: 19 November 2007
PDF: 9 pages
Proc. SPIE 6782, Optoelectronic Materials and Devices II, 67820U (19 November 2007); doi: 10.1117/12.742189
Show Author Affiliations
Hua Yang, Nanyang Technological Univ. (Singapore)
Mee Koy Chin, Nanyang Technological Univ. (Singapore)
Desmond C.S. Lim, DSO National Labs. (Singapore)
Jingtao Zhou, Institute of Semiconductors (China)
Shuhying Lee, Nanyang Technological Univ. (Singapore)
Yuanbing Cheng, Institute of Semiconductors (China)
HongLiang Zhu, Institute of Semiconductors (China)
Weixi Chen, Institute of Semiconductors (China)

Published in SPIE Proceedings Vol. 6782:
Optoelectronic Materials and Devices II
Yoshiaki Nakano, Editor(s)

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