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Proceedings Paper

On the performance analysis and design of a novel shared-layer integrated device using RCE-p-i-n-PD/SHBT
Author(s): Shou-li Zhou; De-ping Xiong; Ya-li Qin; Hai-lin Cui; Yin-zhe Chong; Miao Ang; Ji-he Lv; Jun-hua Gao
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Paper Abstract

Abstract: We have explored the shared-layer integration fabrication of an resonant-cavity-enhanced p-i-n photodector (RCE- p-i-n-PD) and a single heterojunction bipolar transistor (SHBT) with the same epitaxy grown layer structure. MOCVD growth of the different layer structure for the GaAs based RCE- p-i-n-PD/SHBT require compromises to obtain the best performance of the integrated devices. The SHBT is proposed with super-lattice in the collector, and the structure of the base and the collector of the SHBT is used for the RCE. Up to now, the DC characteristics of the integrated device have been obtained.

Paper Details

Date Published: 19 November 2007
PDF: 8 pages
Proc. SPIE 6782, Optoelectronic Materials and Devices II, 67820J (19 November 2007); doi: 10.1117/12.741526
Show Author Affiliations
Shou-li Zhou, Zhejiang Univ. of Technology (China)
De-ping Xiong, Guangdong Univ. of Technology (China)
Ya-li Qin, Zhejiang Univ. of Technology (China)
Hai-lin Cui, Beijing Univ. of Posts and Telecommunications (China)
Yin-zhe Chong, Beijing Univ. of Posts and Telecommunications (China)
Miao Ang, Beijing Univ. of Posts and Telecommunications (China)
Ji-he Lv, Beijing Univ. of Posts and Telecommunications (China)
Jun-hua Gao, Institution of Semiconductors (China)

Published in SPIE Proceedings Vol. 6782:
Optoelectronic Materials and Devices II
Yoshiaki Nakano, Editor(s)

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