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Proceedings Paper

Design and performance of monolithic integrated electro-absorption modulated distributed feedback laser
Author(s): YuanBing Cheng; JiaoQing Pan; Fan Zhou; BaoJun Wang; Hongliang Zhu; Lingjuan Zhao; Wei Wang
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Paper Abstract

High performance InGaAsP/InGaAsP strained compensated multiple-quantum-well (MQW) electroabsorption modulators (EAM) monolithically integrated with a DFB laser diode have been designed and realized by ultra low metal-organic vapor phase epitaxy (MOVPE) based on a novel butt-joint scheme. The optimization thickness of upper SCH layer for DFB and EAM was obtained of the proposed MQW structure of the EAM through numerical simulation and experiment. The device containing 250μm DFB and 170μm EAM shows good material quality and exhibits a threshold current of 17mA, an extinction ratio of higher than 30 dB and a very high modulation efficiency (12dB/V) from 0V to 1V. By adopting a high-mesa ridge waveguide and buried polyimide, the capacitance of the modulator is reduced to about 0.30 pF corresponding to a 3dB bandwidth more than 20GHz.

Paper Details

Date Published: 19 November 2007
PDF: 10 pages
Proc. SPIE 6782, Optoelectronic Materials and Devices II, 67820Y (19 November 2007); doi: 10.1117/12.740872
Show Author Affiliations
YuanBing Cheng, Institute of Semiconductors (China)
JiaoQing Pan, Institute of Semiconductors (China)
Fan Zhou, Institute of Semiconductors (China)
BaoJun Wang, Institute of Semiconductors (China)
Hongliang Zhu, Institute of Semiconductors (China)
Lingjuan Zhao, Institute of Semiconductors (China)
Wei Wang, Institute of Semiconductors (China)

Published in SPIE Proceedings Vol. 6782:
Optoelectronic Materials and Devices II
Yoshiaki Nakano, Editor(s)

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