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Proceedings Paper

Performance analysis of CuIn1-xGaxS2 (CIGS2) thin film solar cells based on semiconductor properties
Author(s): Neelkanth G. Dhere; Anant H. Jahagirdar; Shantinath R. Ghongadi
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Paper Abstract

CuIn1-xGaxS2 (CIGS2) has a bandgap of ~1.5 eV making it an ideal candidate for space applications. CIGS2 thin films were prepared by sulfurizing CuGa/In precursor on Mo-coated glass/ stainless steel (SS) substrates in N2:H2S (4% or 8%) mixture at 475°C. PV parameters measured under AM1.5 conditions at NREL were as follows: the first cell on stainless steel substrate, Voc = 763.3 mV, Jsc = 20.26 mA/cm2, FF = 67.04% and η = 10.4% and for the second cell on Mo-coated glass substrate, Voc = 830.5 mV, Jsc = 20.88 mA/cm2, FF = 69.13% and η = 11.99%. A detailed comparative study of PV parameter of the two cells showed that the increase in the efficiency from 10.4% to 11.99% was made possible by an increase of shunt resistance Rp in the dark from 1160 Ω-cm2 to 2500 Ω-cm2; a slight reduction of series resistance Rs; and a reduction of the diode factor, A and reverse saturation current density, Jo respectively from ~2.1 and ~2.6x10-8 A cm-2 to ~1.72 and ~1.41x10-10 A cm-2.

Paper Details

Date Published: 11 September 2007
PDF: 10 pages
Proc. SPIE 6651, Photovoltaic Cell and Module Technologies, 665104 (11 September 2007); doi: 10.1117/12.734605
Show Author Affiliations
Neelkanth G. Dhere, Florida Solar Energy Ctr. (United States)
Anant H. Jahagirdar, Florida Solar Energy Ctr. (United States)
Shantinath R. Ghongadi, Florida Solar Energy Ctr. (United States)

Published in SPIE Proceedings Vol. 6651:
Photovoltaic Cell and Module Technologies
Bolko von Roedern; Alan E. Delahoy, Editor(s)

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