Proceedings Paper
MOVPE growth of quantum well GaAs/In0.10GaAs for solar cell applications| Format | Member Price | Non-Member Price |
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Paper Abstract
A Quantum Well GaAs/In0.10GaAs single junction solar cell, with p-i-n structure, has been fabricated by metal-organic
vapor-phase epitaxy (MOVPE). In this letter, we report on the study of a MQW solar cell structure with different
thickness of i-layers and pairs of QWs, which was used to extend the absorption region and reduce recombination
losses. The efficiency of varied design was discussed accompanying the carrier capture, carrier escape and radiative
recombinations in QWs. The optimized design parameters of the solar cell structures were determined. The
GaAs/InGaAs QW solar cell is proposed to extend the long-wavelength absorption, as a candidate for the next-generation
high-efficiency multi-junction solar cell.
Paper Details
Date Published: 11 September 2007
PDF: 7 pages
Proc. SPIE 6649, High and Low Concentration for Solar Electric Applications II, 66490E (11 September 2007); doi: 10.1117/12.733593
Published in SPIE Proceedings Vol. 6649:
High and Low Concentration for Solar Electric Applications II
Martha Symko-Davies, Editor(s)
PDF: 7 pages
Proc. SPIE 6649, High and Low Concentration for Solar Electric Applications II, 66490E (11 September 2007); doi: 10.1117/12.733593
Show Author Affiliations
Hwen-Fen Hong, Institute of Nuclear Energy Research (Taiwan)
Cherng-Tsong Kuo, Institute of Nuclear Energy Research (Taiwan)
Cherng-Tsong Kuo, Institute of Nuclear Energy Research (Taiwan)
Published in SPIE Proceedings Vol. 6649:
High and Low Concentration for Solar Electric Applications II
Martha Symko-Davies, Editor(s)
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