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Proceedings Paper

MOVPE growth of quantum well GaAs/In0.10GaAs for solar cell applications
Author(s): Pei-Hsuan Wu; Yan-Kuin Su; Hwen-Fen Hong; Cherng-Tsong Kuo
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Paper Abstract

A Quantum Well GaAs/In0.10GaAs single junction solar cell, with p-i-n structure, has been fabricated by metal-organic vapor-phase epitaxy (MOVPE). In this letter, we report on the study of a MQW solar cell structure with different thickness of i-layers and pairs of QWs, which was used to extend the absorption region and reduce recombination losses. The efficiency of varied design was discussed accompanying the carrier capture, carrier escape and radiative recombinations in QWs. The optimized design parameters of the solar cell structures were determined. The GaAs/InGaAs QW solar cell is proposed to extend the long-wavelength absorption, as a candidate for the next-generation high-efficiency multi-junction solar cell.

Paper Details

Date Published: 11 September 2007
PDF: 7 pages
Proc. SPIE 6649, High and Low Concentration for Solar Electric Applications II, 66490E (11 September 2007); doi: 10.1117/12.733593
Show Author Affiliations
Pei-Hsuan Wu, National Cheng Kung Univ. (Taiwan)
Yan-Kuin Su, National Cheng Kung Univ. (Taiwan)
Hwen-Fen Hong, Institute of Nuclear Energy Research (Taiwan)
Cherng-Tsong Kuo, Institute of Nuclear Energy Research (Taiwan)

Published in SPIE Proceedings Vol. 6649:
High and Low Concentration for Solar Electric Applications II
Martha Symko-Davies, Editor(s)

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