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Proceedings Paper

Temperature dependence of Si-based thin film solar cells near phase boundary
Author(s): Kobsak Sriprapha; Ihsanul Afdi Yunaz; Seung Yeop Myong; Akira Yamada; Makoto Konagai
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Paper Abstract

The temperature dependence of silicon (Si)-based thin film single junction solar cells whose intrinsic absorbers were fabricated near the phase boundary of hydrogenated amorphous silicon (a-Si:H) to hydrogenated microcrystalline silicon (μc-Si:H) was investigated. By varying the hydrogen dilution ratio, wide bandgap protocrytalline silicon (pc-Si:H) and the mixed-phase of a-Si:H and μc-Si:H absorber layers were obtained. Photo J-V characteristics were measured under AM1.5 illumination at ambient temperature in the range of 25-75 °C. We found that the pc-Si:H solar cells which exist below the a-Si:H and µc-Si:H transition boundary exhibited the lowest temperature coefficient (TC) for conversion efficiency (η) and open-circuit voltage (Voc), while the solar cells fabricated at the mixed-phase of a-Si:H and μc-Si:H revealed a relatively high TC for η and Voc. Experimental results indicated that pc-Si:H which fabricated at the silane concentration (SC), SC = [SiH4]/([SiH4]+[H2]), of 5.75% showed the highest initial η, low TC for η and degradation ratio. This material at this condition is a promising for using as an absorber layer of single junction or top cell for tandem solar cells which operating in high temperature regions.

Paper Details

Date Published: 11 September 2007
PDF: 11 pages
Proc. SPIE 6651, Photovoltaic Cell and Module Technologies, 665105 (11 September 2007); doi: 10.1117/12.733451
Show Author Affiliations
Kobsak Sriprapha, Tokyo Institute of Technology (Japan)
Ihsanul Afdi Yunaz, Tokyo Institute of Technology (Japan)
Seung Yeop Myong, Tokyo Institute of Technology (Japan)
Akira Yamada, Tokyo Institute of Technology (Japan)
Makoto Konagai, Tokyo Institute of Technology (Japan)

Published in SPIE Proceedings Vol. 6651:
Photovoltaic Cell and Module Technologies
Bolko von Roedern; Alan E. Delahoy, Editor(s)

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