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Proceedings Paper

Detailed balance: lifetimes and efficiencies
Author(s): Hans J. Queisser
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Paper Abstract

Lifetimes of minority carriers in semiconductors are very important parameters for devices, especially for solar cells. For germanium and silicon, it was discovered that the actually measured lifetimes were by orders of magnitude smaller than the theoretical limit, which can be deduced from the principle of detailed balance of black-body radiative absorption and emission. The thermodynamic limit of solar cell efficiency was also derived based on this principle. The development of solar cells with silicon and its non-ideal junction behavior are reviewed. The contemporary suggested trends to overcome this detailed balance limit are being discussed.

Paper Details

Date Published: 11 September 2007
PDF: 15 pages
Proc. SPIE 6651, Photovoltaic Cell and Module Technologies, 665102 (11 September 2007); doi: 10.1117/12.731594
Show Author Affiliations
Hans J. Queisser, Max-Planck-Institute for Solids (Germany)

Published in SPIE Proceedings Vol. 6651:
Photovoltaic Cell and Module Technologies
Bolko von Roedern; Alan E. Delahoy, Editor(s)

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