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Proceedings Paper

Temperature stress impact on power RF MEMS switches
Author(s): Chloé Bordas; Katia Grenier; David Dubuc; Mathieu Paillard; Jean-Louis Cazaux; Robert Plana
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Paper Abstract

In this paper, capacitive RF-MEMS switches topologies are investigated regarding their power handling capabilities. The topologies differ from the ability to handle thermal stress by an optimization of their anchorage arms. A specific meander arms design leads in fact to enhance by a decade the flexibility regarding their thermal expansion. To evaluate the proposed RF-MEMS morphology, a specific thermal stress protocol has been defined and applied from 20°C up to 120°C. The monitoring of air gap, actuation voltage and insertion losses has been performed after each thermal stress in order to check the impact of the temperature on working switch. The main result indicates that a different thermal behavior depending on the MEMS anchorage arms morphology has been obtained.

Paper Details

Date Published: 15 May 2007
PDF: 11 pages
Proc. SPIE 6589, Smart Sensors, Actuators, and MEMS III, 65890V (15 May 2007); doi: 10.1117/12.722010
Show Author Affiliations
Chloé Bordas, LAAS-CNRS (France)
Katia Grenier, LAAS-CNRS (France)
David Dubuc, LAAS-CNRS (France)
Univ. of Toulouse (France)
Mathieu Paillard, Alcatel Alenia Space (France)
Jean-Louis Cazaux, Alcatel Alenia Space (France)
Robert Plana, LAAS-CNRS (France)
Univ. of Toulouse (France)

Published in SPIE Proceedings Vol. 6589:
Smart Sensors, Actuators, and MEMS III
Thomas Becker; Carles Cané; N. Scott Barker, Editor(s)

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