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Proceedings Paper

Plasma-activated wafer bonding: the new low-temperature tool for MEMS fabrication
Author(s): V. Dragoi; G. Mittendorfer; C. Thanner; P. Lindner
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Paper Abstract

Manufacturing and integration of MEMS devices by wafer bonding often lead to problems generated by thermal properties of materials. These include alignment shifts, substrate warping and thin film stress. By limiting the thermal processing temperatures, thermal expansion differences between materials can be minimized in order to achieve stress-free, aligned substrates without warpage. Achieving wafer level bonding at low temperature employs a little magic and requires new technology development. The cornerstone of low temperature bonding is plasma activation. The plasma is chosen to compliment existing interface conditions and can result in conductive or insulating interfaces. A wide range of materials including semiconductors, glasses, quartz and even plastics respond favorably to plasma activated bonding. The annealing temperatures required to create permanent bonds are typically ranging from room temperature to 400°C for process times ranging from 15-30 minutes and up to 2-3 hours. This new technique enables integration of various materials combinations coming from separate production lines.

Paper Details

Date Published: 15 May 2007
PDF: 7 pages
Proc. SPIE 6589, Smart Sensors, Actuators, and MEMS III, 65890T (15 May 2007); doi: 10.1117/12.721937
Show Author Affiliations
V. Dragoi, EV Group (Austria)
G. Mittendorfer, EV Group (Austria)
C. Thanner, EV Group (Austria)
P. Lindner, EV Group (Austria)

Published in SPIE Proceedings Vol. 6589:
Smart Sensors, Actuators, and MEMS III
Thomas Becker; Carles Cané; N. Scott Barker, Editor(s)

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