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Proceedings Paper

760 nm high-performance VCSEL growth and characterization
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Paper Abstract

High-performance vertical-cavity surface-emitting lasers (VCSELs) with an emission wavelength of approximately 764 nm are demonstrated. This wavelength is very attractive for oxygen sensing. Low threshold currents, high optical output power, single-mode operation, and stable polarization are obtained. Using the surface relief technique and in particular the grating relief technique, we have increased the single-mode output power to more than 2.5mW averaged over a large device quantity. The laser structure was grown by molecular beam epitaxy (MBE) on GaAs (100)-oriented substrates. The devices are entirely based on the AlGaAs mixed compound semiconductor material system. The growth process, the investigations of the epitaxial material together with the device fabrication and characterization are discussed in detail.

Paper Details

Date Published: 21 April 2006
PDF: 7 pages
Proc. SPIE 6185, Micro-Optics, VCSELs, and Photonic Interconnects II: Fabrication, Packaging, and Integration, 61850X (21 April 2006); doi: 10.1117/12.662839
Show Author Affiliations
Fernando Rinaldi, Ulm Univ. (Germany)
Johannes M. Ostermann, Ulm Univ. (Germany)
Andrea Kroner, Ulm Univ. (Germany)
Michael C. Riedl, Ulm Univ. (Germany)
Rainer Michalzik, Ulm Univ. (Germany)

Published in SPIE Proceedings Vol. 6185:
Micro-Optics, VCSELs, and Photonic Interconnects II: Fabrication, Packaging, and Integration
Hugo Thienpont; Mohammad R. Taghizadeh; Peter Van Daele; Jürgen Mohr, Editor(s)

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