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Proceedings Paper

Silicon-nitride for solar cells
Author(s): M. Kunst; O. Abdallah; F. Wuensch
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Paper Abstract

The application of contactless transient photoconductivity measurements in the microwave frequency range for the optoelectronic characterization of Silicon-nitride covered Silicon samples for solar cells is investigated. It is shown that these measurements are a very sensitive tool for the study of the anti-reflection properties of Silicon-nitride films. The investigation of Silicon heterojunction solar cells shows that the illumination of the Silicon-nitride covered rear face of these heterojunctions may be a method to improve the efficiency of these solar cells.

Paper Details

Date Published: 12 May 2006
PDF: 7 pages
Proc. SPIE 6197, Photonics for Solar Energy Systems, 619703 (12 May 2006); doi: 10.1117/12.661521
Show Author Affiliations
M. Kunst, Hahn-Meitner-Institut, Berlin (Germany)
O. Abdallah, Hahn-Meitner-Institut, Berlin (Germany)
F. Wuensch, Hahn-Meitner-Institut, Berlin (Germany)


Published in SPIE Proceedings Vol. 6197:
Photonics for Solar Energy Systems
Andreas Gombert, Editor(s)

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