Proceedings Paper
Methods for benchmarking photolithography simulators: part IV| Format | Member Price | Non-Member Price |
|---|---|---|
| $17.00 | $21.00 |
Paper Abstract
In a previous series of papers, we proposed benchmarks for lithography simulators drawn from the optics literature for aerial image, optical film-stack calculations, and mask topography effects. We extend this work and present benchmarks for PEB and resist development. These benchmarks can easily be applied to any lithography simulator that models these lithographic effects.
Paper Details
Date Published: 20 March 2006
PDF: 11 pages
Proc. SPIE 6154, Optical Microlithography XIX, 61542X (20 March 2006); doi: 10.1117/12.660031
Published in SPIE Proceedings Vol. 6154:
Optical Microlithography XIX
Donis G. Flagello, Editor(s)
PDF: 11 pages
Proc. SPIE 6154, Optical Microlithography XIX, 61542X (20 March 2006); doi: 10.1117/12.660031
Show Author Affiliations
Chris A. Mack, lithoguru.com (United States)
Published in SPIE Proceedings Vol. 6154:
Optical Microlithography XIX
Donis G. Flagello, Editor(s)
© SPIE. Terms of Use
