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Proceedings Paper

Methods for benchmarking photolithography simulators: part IV
Author(s): Trey Graves; Mark D. Smith; Chris A. Mack
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Paper Abstract

In a previous series of papers, we proposed benchmarks for lithography simulators drawn from the optics literature for aerial image, optical film-stack calculations, and mask topography effects. We extend this work and present benchmarks for PEB and resist development. These benchmarks can easily be applied to any lithography simulator that models these lithographic effects.

Paper Details

Date Published: 20 March 2006
PDF: 11 pages
Proc. SPIE 6154, Optical Microlithography XIX, 61542X (20 March 2006); doi: 10.1117/12.660031
Show Author Affiliations
Trey Graves, KLA-Tencor Corp. (United States)
Mark D. Smith, KLA-Tencor Corp. (United States)
Chris A. Mack, (United States)

Published in SPIE Proceedings Vol. 6154:
Optical Microlithography XIX
Donis G. Flagello, Editor(s)

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