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Proceedings Paper

Lithography budget analysis at the process module level
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Paper Abstract

A simple experimentally characterized lumped-parameter budget model is developed with the goal of quantifying the most significant components of critical dimension (CD) variation through an integrated process module. Tracked components include mask fabrication budgets, mask error factor, scanner field variation, optical proximity correction error, CD errors over chip topography, wafer-to-wafer and lot-to-lot variation. The components of variation are quantified for lithography and etch where appropriate and are fed into a simple interaction model to construct an overall patterning module CD budget. Normalized experimental results for this budget analysis are presented for 65 nm technology node contact patterning processes.

Paper Details

Date Published: 21 March 2006
PDF: 12 pages
Proc. SPIE 6154, Optical Microlithography XIX, 61543Y (21 March 2006);
Show Author Affiliations
Colin J. Brodsky, IBM Microelectronics (United States)
William Chu, IBM Microelectronics (United States)

Published in SPIE Proceedings Vol. 6154:
Optical Microlithography XIX
Donis G. Flagello, Editor(s)

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