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Proceedings Paper

Mask topography effect with polarization at hyper NA
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Paper Abstract

As ArF immersion lithography is adopted beyond the 45 nm node, the minimum mask feature size will become equal to or smaller than the wavelength of the light. For such situations, polarization by the mask will play a very important role on imaging quality. In addition, TM and TE diffraction efficiencies for very narrow grating masks will depend significantly on the mask materials. Also, they are affected by variations of absorber thickness, sidewall angle and material optical properties. In this paper, we investigate how the aquatic images with unpolarized and properly polarized illumination on binary image masks, attenuated phase shift masks (attPSM) and alternating aperture phase shift masks (altPSM) are affected by those mask parameters, using rigorous electro-magnetic field simulator. In terms of mask topography effects, there are some difficulties with phase shift mask technology with unpolarized illumination beyond 45 nm node. We will need to control absorber thickness within 2.6% for attPSM with unpolarized illumination and sidewall angle of π-shifter trenches within 1 degree for altPSM with unpolarized illumination.

Paper Details

Date Published: 21 March 2006
PDF: 9 pages
Proc. SPIE 6154, Optical Microlithography XIX, 61544F (21 March 2006); doi: 10.1117/12.657155
Show Author Affiliations
Norihiro Yamamoto, Spansion Inc. (United States)
Jongwook Kye, Advanced Micro Devices (United States)
Harry J. Levinson, Advanced Micro Devices (United States)

Published in SPIE Proceedings Vol. 6154:
Optical Microlithography XIX
Donis G. Flagello, Editor(s)

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