Share Email Print

Proceedings Paper

Enhancing DRAM printing process window by using inverse lithography technology (ILT)
Author(s): Chih-Wei Chu; Becky Tsao; Karl Chiou; Snow Lee; Jerry Huang; Yong Liu; Timothy Lin; Andrew Moore; Linyong Pang
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

Inverse lithography technology (ILT) was studied during process development for four layers from memory semiconductor designs. This paper describes techniques used in each of the layers. So as to demonstrate this technology in a wide range of semiconductor patterns, we show results from all four layers. Polysilicon was chosen to demonstrate the selection of exposure/defocus (ED) points for constraining the inversion. Marking process window boundaries during a mask creation run was demonstrated on a contact hole layer. With a deep trench layer, mask constraints were varied and write times studied. Lastly, wafer SEM images were collected for an active layer to explore image fidelity though focus and CD stability along a line.

Paper Details

Date Published: 20 March 2006
PDF: 10 pages
Proc. SPIE 6154, Optical Microlithography XIX, 61543O (20 March 2006); doi: 10.1117/12.657015
Show Author Affiliations
Chih-Wei Chu, ProMOS Technologies (Taiwan)
Becky Tsao, ProMOS Technologies (Taiwan)
Karl Chiou, ProMOS Technologies (Taiwan)
Snow Lee, ProMOS Technologies (Taiwan)
Jerry Huang, ProMOS Technologies (Taiwan)
Yong Liu, Luminescent Technologies, Inc. (United States)
Timothy Lin, Luminescent Technologies, Inc. (United States)
Andrew Moore, Luminescent Technologies, Inc. (United States)
Linyong Pang, Luminescent Technologies, Inc. (United States)

Published in SPIE Proceedings Vol. 6154:
Optical Microlithography XIX
Donis G. Flagello, Editor(s)

© SPIE. Terms of Use
Back to Top