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Proceedings Paper

Inverse lithography technology at chip scale
Author(s): Benjamin Lin; Ming Feng Shieh; Jie-wei Sun; Jonathan Ho; Yan Wang; Xin Wu; Wolfgang Leitermann; Orson Lin; Jason Lin; Yong Liu; Linyong Pang
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Paper Abstract

In this paper we describe, from the user's point of view, how Inverse Lithography Technology (ILT) differs from Optical Proximity Correction (OPC). We discuss some specifics of ILT at chip-scale. We show simulation and experimental results from 90nm and 65nm semiconductor nodes, comparing results from ILT-generated masks and OPC-generated masks for real-life layouts, in a production environment. In addition, we discuss issues related to complexity and manufacturability of ILT-generated masks.

Paper Details

Date Published: 21 March 2006
PDF: 11 pages
Proc. SPIE 6154, Optical Microlithography XIX, 615414 (21 March 2006); doi: 10.1117/12.656827
Show Author Affiliations
Benjamin Lin, United Microelectronic Corp. (Taiwan)
Ming Feng Shieh, United Microelectronic Corp. (Taiwan)
Jie-wei Sun, United Microelectronic Corp. (Taiwan)
Jonathan Ho, Xilinx Inc. (United States)
Yan Wang, Xilinx Inc. (United States)
Xin Wu, Xilinx Inc. (United States)
Wolfgang Leitermann, Xilinx Inc. (United States)
Orson Lin, Toppan Chunghwa Electronics (Taiwan)
Jason Lin, Toppan Chunghwa Electronics (Taiwan)
Yong Liu, Luminescent Technologies, Inc. (United States)
Linyong Pang, Luminescent Technologies, Inc. (United States)

Published in SPIE Proceedings Vol. 6154:
Optical Microlithography XIX
Donis G. Flagello, Editor(s)

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