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Proceedings Paper

DOF enhancement for contact holes by using Nikon's CDP option and its introduction into production
Author(s): Louis-Pierre Armellin; Virginie Dureuil; Laurent Nuel; Vincent Salvetat; Winfried Meier; Andreas Kraft
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Paper Abstract

Historically the primary methods used to achieve the industries ever-tightening resolution requirements were reduction of exposure wavelength and increased projection lens NA. Today however, photo engineers are pushing optical lithography well beyond the realm of what was once considered practical. Specific scanner exposure tool features have to be implemented to achieve the aggressive imaging objectives. One such example is to use focus drilling to expand the depth of focus for contact layers. This paper describes the implementation of focus drilling through the Continuous DOF expansion Procedure (CDP). In CDP, the wafer is tilted along the scanning direction, while the wafer stage continuously moves upward or downward during exposure. CDP technology provides an enhanced process window with initial data showing a 30% improvement in DOF for 250-nm contact holes. It also eliminates the need for double exposures and therefore maintains high throughput, comparable to standard wafer exposure.

Paper Details

Date Published: 15 March 2006
PDF: 10 pages
Proc. SPIE 6154, Optical Microlithography XIX, 61542B (15 March 2006); doi: 10.1117/12.656522
Show Author Affiliations
Louis-Pierre Armellin, Altis Semiconductor (France)
Virginie Dureuil, Altis Semiconductor (France)
Laurent Nuel, Altis Semiconductor (France)
Vincent Salvetat, Nikon Precision Europe GmbH (Germany)
Winfried Meier, Nikon Precision Europe GmbH (Germany)
Andreas Kraft, Nikon Precision Europe GmbH (Germany)

Published in SPIE Proceedings Vol. 6154:
Optical Microlithography XIX
Donis G. Flagello, Editor(s)

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