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Proceedings Paper

A new empirical model for heterojunction phototransistors
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Paper Abstract

A new simplified heterojunction phototransistor (HPT) circuit model is given in this paper. Most of papers use Ebers-Moll model to describe the optical-electrical relations of HPT. Which is a physical based model and must be changed with different device structure. In this paper, an empirical model is employed. This model mainly formed by three parts: the photo current (Iph), base current (Ib) and collector current(Ic). A dependent current source is used to model the photo current between the collector and base. The photo current can be different from different optical power. Ib are depend on base-emitter voltage while Ic is a function of collector-emitter voltage, Ib and Iph. Contrast with the Ebers-moll model, the empirical model greatly reduced the complexity of the circuit. The model parameters are extracted on measured Ic-Vce and gummel plots. Then, dates in some documents were used to test the empirical model. There is a good agreement with the measured results.

Paper Details

Date Published: 30 December 2005
PDF: 7 pages
Proc. SPIE 6037, Device and Process Technologies for Microelectronics, MEMS, and Photonics IV, 603711 (30 December 2005); doi: 10.1117/12.638694
Show Author Affiliations
Hongwei Liu, Tianjin Polytechnic Univ. (China)
Pingjuan Niu, Tianjin Polytechnic Univ. (China)
Weilian Guo, Tianjin Polytechnical Univ. (China)
Tianjin Univ. (China)

Published in SPIE Proceedings Vol. 6037:
Device and Process Technologies for Microelectronics, MEMS, and Photonics IV
Jung-Chih Chiao; Andrew S. Dzurak; Chennupati Jagadish; David V. Thiel, Editor(s)

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